Electron powder ribbon polycrystalline silicon plates used for porous layer fabrication

Kolic, Y.; Gauthier, R.; Perez, Marc; Sibaï, A.; Dupuy, J.; Pinard, P.; Mghaieth, Ridha; Maâref, H.

doi:10.1016/0040-6090(94)05644-s

Cited by 6 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with single crystalline silicon, nanocrystalline silicon can be easily recognized with visible grains and produced through various methods in different sizes, shape, and purity. [2] Although amorphous silicon also has the aforementioned advantages, nanocrystalline silicon has a larger quantity of mobile charge carriers and is more stable under electric field and light-induced stresses.…”

Section: Introductionmentioning

confidence: 99%

“…Nanocrystalline silicon, a material composed of nano‐size silicon crystalline grains, is widely used in microelectronics and optoelectronic devices such as gates, load resistors, and solar cells, because of its high performance. Compared with single crystalline silicon, nanocrystalline silicon can be easily recognized with visible grains and produced through various methods in different sizes, shape, and purity . Although amorphous silicon also has the aforementioned advantages, nanocrystalline silicon has a larger quantity of mobile charge carriers and is more stable under electric field and light‐induced stresses.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Sub‐micron imaging of sub‐surface nanocrystalline structure in silicon

Tang

Yue

et al. 2013

J Raman Spectroscopy

View full text Add to dashboard Cite

This work reports on a surprising and abnormal increase of the Raman intensity when the probing area is moved to the edge of a mechanically cleaved Si wafer. Our detailed surface structure study based on atomic force microscope and scanning electron microscope rules out any effect from surface morphology. Systematic study of the Raman system focusing effect with a range of µm finds no focusing effect involved in our observed phenomenon. The linewidth, wavenumber, and intensity of the 521 cm−1 peak are obtained and evaluated quantitatively when the testing region is moved from the center to the cleaved edge. When the grain size of crystalline silicon varies from 20 to 10 nm, the Raman intensity of the 521 cm−1 peak is increasing abnormally, by about 100%. Meanwhile, both the linewidth and wavenumber change by about 2 cm−1 and 4 cm−1, respectively. If instrument and surface factors are well controlled/defined, the change of Raman intensity could provide a sensitive and complementary method for grain size characterization in addition to the Raman wavenumber and linewidth methods. Copyright © 2013 John Wiley & Sons, Ltd.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sub‐micron imaging of sub‐surface nanocrystalline structure in silicon

Tang

Yue

et al. 2013

J Raman Spectroscopy

View full text Add to dashboard Cite

show abstract

“…Series resistance of the connection points can be shown one of the reason of being less efficient. In addition they are not quite as good as monocrystalline in terms of heat tolerance and being space-efficient [18,19].…”

Section: Polycrystalline Photovoltaic Modulesmentioning

confidence: 99%

Fotovoltaik (FV) Teknolojileri, FV Modül Karakteristiği, Bağlantı Formları ve Standartların İncelenmesi

Çelik¹,

Teke²,

Yildirim³

2015

Çukurova Üniversitesi Mühendislik-Mimarlık Fakültesi Dergisi

View full text Add to dashboard Cite

The effective utilization of energy has become a major concern in recent years on account of the rapidly increasing demand with population growth and industrialization. In parallel with this growing demand towards energy usage, the world-wide energy supply has been subjected to enormous stress. Therefore, energy efficiency and using alternative energy sources issues have become more crucial. Photovoltaic (PV) systems can be shown among the mostly used alternative energy sources and this technology is gaining remarkable popularity. However, PV systems suffer from low system efficiency, high initial cost and erratic atmospheric conditions. Presently, the studies are extended in order to improve the structural efficiency of the PV panels and provide energy efficiency solutions by qualifying the raw material. In this paper, it is aimed to make an investigation on the PV cells technology in terms of efficiency, cost and technical properties based on employed raw materials. On the other hand, a PV panel model is presented to achieve extraction of panel characteristic and for usage in power systems simulation in PSCAD/EMTDC program. This panel model is suitable for the purpose of realizing power system dynamic and transient analysis of both stand-alone and grid connected PV systems. Also an evaluation of grid connection standards and codes for Turkey is presented in detail.Anahtar Kelimeler : Photovoltaic technology, Grid codes, Photovoltaic cell modelling, PV grid connection Fotovoltaik (FV) Teknolojileri, FV Modül Karakteristiği, Bağlantı Formları ve Standartların İncelenmesi ÖzetSon yıllarda enerjinin etkin kullanımı, nüfus artışı ve sanayileşme ile birlikte hızla artan enerji talebine bağlı olarak çok önemli hale getirmiştir. Enerji kullanımında artan talebe paralel olarak dünya geneli enerji arzı çok büyük baskıya maruz kalmaktadır. Bu nedenle enerji verimliliği ve alternatif enerji kaynaklarının kullanılması çok önemli bir konu haline gelmiştir.

show abstract

“…Nanocrystalline silicon, which is defined as a material composed of nano-size silicon crystalline grains [50], is popular in microelectronics and optoelectronic industry, such as gates, load resistors, and solar cells, because of its high performance. Compared with single crystalline silicon, nanocrystalline silicon can be easily recognized with visible grains and produced through various methods in different sizes, shape and purity [51]. Although amorphous silicon also has the above advantages, nanocrystalline silicon has a larger quantity of mobile charge carriers and is more stable under electric field and light-induced stresses.…”

Section: Photothermal Technique Development and Applications In Spidementioning

confidence: 99%

Optical based thermal probing and characterization

Xu¹

View full text Add to dashboard Cite

Electron powder ribbon polycrystalline silicon plates used for porous layer fabrication

Cited by 6 publications

References 10 publications

Sub‐micron imaging of sub‐surface nanocrystalline structure in silicon

Sub‐micron imaging of sub‐surface nanocrystalline structure in silicon

Fotovoltaik (FV) Teknolojileri, FV Modül Karakteristiği, Bağlantı Formları ve Standartların İncelenmesi

Optical based thermal probing and characterization

Contact Info

Product

Resources

About