Electron-phonon interactions in modulation-dopedAlxGa1−

Diffusion thermopower of a p‐type Si/Si1–xGex heterostructure at zero magnetic field

“…It has been shown [12] that for the finite barrier potential 0 V , the lowest subband may be very well described by the modified Fang-Howard wave function [9,10,12]: (9) in which k and κ are half of the wave numbers in the well and barrier, respectively. Further, A B c κ , , , , and k are the variational parameters to be determined by minimizing the ground state energy connecting to 0 V [12].…”

“…Further, A B c κ , , , , and k are the variational parameters to be determined by minimizing the ground state energy connecting to 0 V [12]. Detailed expressions to be minimized could be found elsewhere [4,9,10,12,13]. Using Eq.…”

“…(6) allows for the local field corrections associated with the many-body interactions of the 2D hole gas [9]. The form factor S ( ) F q is defined by [4,10]:…”

Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

“…Therefore the parameters B, B' and β can be expressed in terms of b and b' [15]. The corresponding energy Ε0 of the bottom of the ground subband depends in a complex way on the variational parameters and the details of the carrier and impurity distribution in MDH [15].…”

“…Incorporation of the penetration is important for calculations of the alloy disorder and surface roughness scatterings in GaAlAs/GaAs MDHs. The variational wave function (7) is very frequently used in the calculations of the electronic transport at low electron densities when only the ground subband is occupied [14,15]. At higher electron densities or at elevated temperatures one needs to consider also the transport in higher lying excited subbands [16].…”