Charge Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems

Abstract

General aspects of the electronic transport in two-dimensional and quasi--three-dimensional semiconductor systems are discussed. Contributions of dicherent scattering processes to the total electron and hole mobilities in various types of modulation doped heterostructures are calculated. It is shown that in a wide temperature range phonon scattering is the principal scattering mechanism limiting electron and hole mobilities in high quality AlGaAs/GaAs modulation doped heterostructures. Scattering from rough walls in wide parabolic wells is briefly reviewed.