Electron-phonon interaction via the Pekar mechanism in nanostructures

Glavin, B. A.; Kochelap, V. A.; Linnik, T. L.

doi:10.1103/physrevb.71.081305

Cited by 20 publications

(23 citation statements)

References 14 publications

(10 reference statements)

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“…It has been recently pointed out that a different situation may arise when built-in permanent piezoelectric fields are present. [6][7][8][9][10] Interestingly, a huge acoustic phonon coherent generation efficiency has been reported in GaInN/GaN piezoelectric superlattices ͑SLs͒, which is more than 2 orders of magnitude larger than that observed in standard GaAs/AlAs structures. 6,7 The proposed mechanism involves the screening of the piezoelectric built-in field by photoexcited carriers, which triggers an instantaneous coherent displacement with wave vector determined by the SL period.…”

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confidence: 99%

Acoustic phonon Raman scattering induced by a built-in electric field

et al. 2008

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International audienceWe report acoustic phonon resonant Raman scattering experiments in strained piezoelectric [311] Ga0.85In0.15As/AlAs superlattices with permanent built-in piezoelectric fields. The acoustic phonon spectra develop upon resonant excitation around the ``forbidden'' hh(2) -> e(1) interband transition into a broad intense structure, which is peaked at the first folded phonons. Standard narrow acoustic phonon doublets are recovered when the power of the resonant laser excitation is increased. Such change in the resonant Raman spectra with increasing power is accompanied by a strong shift and bleaching of a photoluminescence emission related to the hh(2) -> e(1) transition. None of these observations are present in [001] Ga0.85In0.15As/AlAs superlattices that lack the built-in fields because of symmetry. We interpret these results as originated in a Raman process resonant with an intermediate transition that becomes allowed due to the built-in fields. We address the possible mechanisms by which the acoustic phonons strongly modulate the dielectric function in these piezoelectric nanostrutures, including an electron-acoustic-phonon interaction involving the phonon modulation of the built-in fields. This mechanism, which is shown to be proportional to the magnitude of the built-in fields, is quenched when the latter are screened by photoexcited carriers

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Acoustic phonon Raman scattering induced by a built-in electric field

et al. 2008

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“…[1][2][3][4][5] The control of spin dynamics in materials has become a topical issue in basic research and material science under the perspective of spin-based electronic devices. 9 Based on the consideration of band structure effect, one way to generate spin-dependent current is the inclusion of k-linear terms in the Hamiltonian. Various semiconductor materials, such as III-V heterostructures, are involved in the spintronics activities and already good candidates for spintronics.…”

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Photogalvanic effects for interband transition in p-Si0.5Ge0.5∕Si multiple quantum wells

Wei

Cho

Chen

et al. 2007

Applied Physics Letters

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Articles you may be interested inO-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning Circular photogalvanic effect ͑CPGE͒ and linear photogalvanic effect for interband transition have been observed simultaneously in Si 0.5 Ge 0.5 / Si multiple quantum wells. The signature of the CPGE is evidenced by the change of its sign upon reversing the radiation helicity. It is found that the observed CPGE photocurrent is an order of magnitude greater than that obtained for intersubband transition. The dependences of the CPGE on the angle of incidence and the excitation intensities can be well interpreted based on its characteristics. The large signal of spin generation observed here at room temperature should be very useful for the realization of practical application of spintronics.

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“…The problem is, what are the parameters that should be used in those models, and how are they related to parameters obtained from spectroscopic measurements in 2D structures. We will see that simplified models of 2D hole systems [17][18][19][20][21][22][23][24][25][26] have to be adjusted in order to capture the true nature of holes. Third, our understanding of particle interactions, and the possibilities to control these interactions is often based on an understanding of single-particle properties.…”

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Magnetic field spectral crossings of Luttinger holes in quantum wells

Simion

Lyanda-Geller

2014

Phys. Rev. B

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We develop an analytic approach to two-dimensional (2D) holes in a magnetic field that allows us to gain insight into physics of measuring the parameters of holes, such as cyclotron resonance, Shubnikov-De Haas effect and spin resonance. We derive hole energies, cyclotron masses and the g-factors in the semiclassical regime analytically, as well as analyze numerical results outside the semiclassical range of parameters, qualitatively explaining experimentally observed magnetic field dependence of the cyclotron mass. In the semiclassical regime with large Landau level indices, and for size quantization energy much bigger than the cyclotron energy, the cyclotron mass coinsides with the in-plane effective mass, calculated in the absence of a magnetic field.The hole g-factor in a magnetic field perpendicular to the 2D plane is defined not only by the constant of direct coupling of the angular momentum of the holes to the magnetic field, but also by the Luttinger constants defining the effective masses of holes. We find that the g-factor for quasi 2D holes with heavy mass in the [001] growth direction in GaAs quantum well is g = 4.05 in the semiclasssical regime. Outside the semiclassical range of parameters, holes behave as a species completely different from electrons. Spectra for size-and magnetic-field-quantized holes are non-equidistant, not fan-like, and exhibit multiple crossings, including crossing in the ground level. We calculate the effect of Dresselhaus terms, which transform some of the crossings into anticrossings, and the effects of the anisotropy of the Luttinger Hamiltonian on the 2D hole spectra. Dresselhaus terms of different symmetries are taken into account, and a regularization procedure is developed for the k 3 z Dresselhaus terms. Control of the non-equidistant levels and crossing structure by the magnetic field can be used to control Landau level mixing in hole systems, and thereby control hole-hole interactions in the magnetic field.

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Electron-phonon interaction via the Pekar mechanism in nanostructures

Cited by 20 publications

References 14 publications

Acoustic phonon Raman scattering induced by a built-in electric field

Acoustic phonon Raman scattering induced by a built-in electric field

Photogalvanic effects for interband transition in p-Si0.5Ge0.5∕Si multiple quantum wells

Magnetic field spectral crossings of Luttinger holes in quantum wells

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