Articles you may be interested inO-band quantum-confined Stark effect optical modulator from Ge/Si0.15Ge0.85 quantum wells by well thickness tuning Circular photogalvanic effect ͑CPGE͒ and linear photogalvanic effect for interband transition have been observed simultaneously in Si 0.5 Ge 0.5 / Si multiple quantum wells. The signature of the CPGE is evidenced by the change of its sign upon reversing the radiation helicity. It is found that the observed CPGE photocurrent is an order of magnitude greater than that obtained for intersubband transition. The dependences of the CPGE on the angle of incidence and the excitation intensities can be well interpreted based on its characteristics. The large signal of spin generation observed here at room temperature should be very useful for the realization of practical application of spintronics.
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