Electron paramagnetic resonance studies of silicon-related defects in diamond

Edmonds, Andrew M.; Newton, Mark E.; Martineau, P. M.; Twitchen, Daniel J.; Williams, Stephanie D

doi:10.1103/physrevb.77.245205

Cited by 106 publications

(65 citation statements)

References 34 publications

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“…As shown previously, several models can be proposed for a defect with a trigonal symmetry around <111> For the newly observed center, the germanium split-vacancy model is more preferred because of the large atomic radius of germanium. The new paramagnetic center has the same symmetry and spin state as the SiV 0 center [58]; thus, the new spectrum was ascribed to the neutral germanium split-vacancy defect.…”

Section: Germanium-vacancy Defect In Diamondmentioning

confidence: 99%

“…The corresponding spectrum (KUL1) has an axial symmetry around <111> and was fitted with the following spin-Hamiltonian parameters: S = 1, g || = 2.0040, g ⊥ = 2.0035, D = 35.8 mT, E = 0 [55][56][57]. In a later work [58], the HFS of one 29 Si atom (A( 29 Si) || = 2.73 mT, A( 29 Si) ⊥ = 2.82 mT) and the HFS of six equivalent 13 C atoms (A( 13 C) || = 2.36 mT, A( 13 C) ⊥ = 1.08 mT) were detected. It was shown that approximately 75% of the spin density was localized on these six carbon atoms.…”

Section: Silicon-vacancy Defect In Diamondmentioning

confidence: 99%

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Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

2017

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Diamond is a unique mineral widely used in diverse fields due to its remarkable properties. The development of synthesis technology made it possible to create diamond-based semiconductor devices. In addition, doped diamond can be used as single photon emitters in various luminescence applications. Different properties are the result of the presence of impurities or intrinsic defects in diamond. Thus, the investigation of the defect formation process is of particular interest. Although hydrogen, nitrogen, and boron have been known to form different point defects, the possibility for large impurity atoms to incorporate into the diamond crystal structure has been questioned for a long time. In the current paper, the paramagnetic nickel split-vacancy defect in diamond is described, and the further investigation of nickel-, cobalt-, titanium-, phosphorus-, silicon-, and germanium-related defects is discussed.

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Section: Germanium-vacancy Defect In Diamondmentioning

confidence: 99%

Section: Silicon-vacancy Defect In Diamondmentioning

confidence: 99%

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

2017

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“…The structure of the ZPL is complicated and consists of many lines, originating from the split ground and excited states as well as different silicon isotopes [99,102]. The atomic structure of the 737 nm defect consists of a silicon atom splitting two vacancies, as was recently confirmed by EPR measurements [93]. There is a disagreement in the literature regarding the charge state of the complex, however, recent results suggest a negative charge state for this center [93].…”

Section: Silicon Defectsmentioning

confidence: 96%

“…3. Crystallographic models of three defects in diamond which evolved particular interest in recent years due to their ability to emit single photons: (a) the NV center (image is taken from Ref [92]) (b) the nickel related NE8 center (image is taken from Ref [29]) and (c) the SiV center (image is taken from Ref [93]. (d) The PL spectra of each of these defects.…”

Section: Transition Metalsmentioning

confidence: 99%

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Novel Single Photon Emitters Based on Color Centers in Diamond

Aharonovich¹,

Castelletto²,

Prawer³

2011

AIP Conference Proceedings

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Exploitation of emerging quantum technologies requires efficient fabrication of key building blocks. Single photon sources are one of these fundamental constituents that are presently pushing the bounds of existing materials and fabrication techniques. Color centers in diamond are very attractive in this respect since they are the only photostable solid-state single photon emitters operating at room temperature known to date.The Nitrogen-Vacancy (NV) complex is one example of such an optical center and has been subject to intensive research due to the availability of optical readout of its individual electronic spin state. However, the NV center has fundamental limitations: strong phonon coupling of the excited state which results in a broad photoluminescence spectrum (~ 100 nm) of which the zero-phonon line makes up only 4%. Emission of single photons in the zero phonon line is then extremely weak, typically on the order of a few thousands of photons per second. Such count rates are insufficient for the realization of advanced quantum information processing protocols.To move beyond the limitations of the NV there is an emerging need to identify and fabricate novel diamond based single photon emitters with improved photo-physical characteristics. Development of such emitters is the main goal of this thesis.We first concentrate on the recent progress in materials science and fabrication techniques of high quality nanodiamond crystals. We demonstrate the ability to grow high quality, submicron sized diamond crystals with a control over their final size and density using a microwave assisted chemical vapor deposition.We then study two methodologies to engineer diamond based single photon emitters in the grown nanodiamonds. In the first, nickel is implanted into the substrate onto which the nanocrystals are subsequently grown. During the diamond growth, the substrate is slightly etched and the nickel atoms diffuse and incorporate into the growing crystals. In the second we employ direct ion implantation of nickel into already deposited individual diamond nanocrystals. Optical and correlation spectroscopy measurements reveal that these methodologies are effective to fabricate nickel related single photon emitters, with zero phonon lines centered in the near infra-red and a short excited state lifetime (~3 ns).ii Furthermore, the ability of diamond to host various luminescence centers prompted the discovery of a new class of ultra bright single photon emitters. These new emitters found in diamond crystals grown on sapphire substrate and assigned to chromium, which is present in the substrate and incorporated into the crystal during the growth. Nanodiamonds hosting these centers deliver outstanding performance such as narrow photoluminescence in the near infra-red and ultra bright single photon emission with count rate of ~ 3.2×10 6 counts/s -the brightest single photon source known to date.Importantly, some of the emitters exhibit a photon statistics without any photon bunching at saturation, indicating a two-...

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Silicon‐containing defects in HPHT diamond synthetized in Mg–Si–C system

Nadolinny

Komarovskikh

Palyanov

et al. 2015

Physica Status Solidi (a)

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Phone: þ7 383 330 95 15, Fax: þ7 383 330 94 89Diamond crystals synthesized in the Mg-Si-C system at high pressure high temperature (HPHT) conditions have been studied by EPR and photoluminescence. In the EPR spectra of the samples, two centers with S ¼ 1 and S ¼ 1/2 were detected along with substitutional nitrogen P1. Investigation of the angular dependence allowed us to establish spin Hamiltonian parameters of these centers, which turned out to be silicon containing centers KUL1 and KUL8, neutral and negatively charged silicon atom in a split-vacancy configuration, respectively. In the photoluminescence spectra of the diamond crystals there was an intense line at 737 nm corresponding to the (Si-V) À defect. X-ray irradiation, as well as UV excitation, led to an increase in relative intensities of P1 and KUL1 EPR signals, at the same time relative intensity of KUL8 decreased. Heat treatment at 773 K led to the recovery of the initial EPR spectrum. Our results confirm the hypothesis that KUL8 center is negatively charged state of Si-V defect.

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Electron paramagnetic resonance studies of silicon-related defects in diamond

Cited by 106 publications

References 34 publications

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Incorporation of Large Impurity Atoms into the Diamond Crystal Lattice: EPR of Split-Vacancy Defects in Diamond

Novel Single Photon Emitters Based on Color Centers in Diamond

Silicon‐containing defects in HPHT diamond synthetized in Mg–Si–C system

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