Electron paramagnetic resonance of scandium in silicon carbide

Баранов, П. Г.; Il’in, I. V.; Мохов, Е. Н.; Роенков, А. Д.; Khramtsov, V. A.

doi:10.1134/1.1130124

Cited by 17 publications

(26 citation statements)

References 10 publications

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“…The (Ga 2+ ) I centre is probably an isolated Ga 2+ , whereas the (Ga 2+ ) II centre is proposed to be a Ga 2+ -cation vacancy complex (Fig. 39), similarly to what was proposed in [91] to occur upon X-irradiation in KCl and NaCl doped with Ga + . The observation that the V K centre does not recombine with the F centre electron, but that it is captured by Ga + could be explained by the fact that the ionic radius of the Ga + activator (0.81 A) is almost twice smaller than that of Rb + (1.47 A).…”

Section: Generation Of (Ga 2+ ) I and (Ga 2+ ) Ii Centres In Rbbr : Ga +mentioning

confidence: 72%

Physics and Current Understanding of X-Ray Storage Phosphors

Schweizer

2001

phys. stat. sol. (a)

161

108

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BaFBr doped with Eu 2+ is the most successful X-ray storage phosphor used for digital radiography so far. The mechanisms of information storage and subsequent read-out are, however, not yet fully understood. The present understanding of the structures and reactions of the radiation-induced point defects involved in these processes are critically discussed. The shortcomings of X-ray storage phosphor screens based on BaFBr : Eu 2+ are the inferior spatial resolution compared to conventional X-ray films. Also reviewed are therefore alternative storage phosphors such as alkali halides doped with Eu 2+ , Ga + , In + , or Tl + or elpasolites doped with Ce 3+ or Eu 2+ which are also promising with high figures of merit and potentially higher spatial resolution. A completely new approach is the use of suitably doped glasses and glass ceramics. First results on fluorozirconate glass ceramics with good storage and read-out properties are reviewed.

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Section: Generation Of (Ga 2+ ) I and (Ga 2+ ) Ii Centres In Rbbr : Ga +mentioning

confidence: 72%

Physics and Current Understanding of X-Ray Storage Phosphors

Schweizer

2001

phys. stat. sol. (a)

161

108

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“…6. Ga 2+ is not with a common valence for Ga element, however, it was also observed in other systems, such as RbBr:Ga, NaCl:Ga, and KCl:Ga. 25,26 Actually, the g factor is a "chemical shift" parameter. 16 The g factor reported in our work is different from those reported in Ref.…”

Section: ͓5͔mentioning

confidence: 99%

Effects of O[sub 2] Partial Pressure and Ga Atmosphere on the Luminescence of Native Defects in β–Ga[sub 2]O[sub 3] Phosphor

Liu

Jing

Wang

2007

J. Electrochem. Soc.

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β–normalGa2normalO3 , a native defect luminescent material with blue emission, was fabricated by annealing β–normalGa2normalO3 powders under various O2 partial pressures or in Ga metal atmosphere. Annealing under low O2 partial pressure favors the photoluminescence (PL), which indicates that VO× should be one of the luminescence centers in this phosphor. Annealing in Ga metal atmosphere reduced the PL intensity, which indirectly suggests that VGa× or defect cluster (VGa,VO)× might be another luminescent center. Electron paramagnetic resonance (EPR) measurements verified the existence of single ionized oxygen vacancy (VnormalObold∙) . An EPR signal with g=4.0468 and four hyperfine lines was observed, which is considered to be related to Ga2+ and the hyperfine interaction parameter is 112G . Furthermore, the correlations between PL intensity and the densities of VO∙ as well as Ga2+ were studied. At present, although we can not clarify whether Ga2+ exists as Gaibold∙bold∙ or GaGa′ , VO× , and Ga2+ may act as donors, whereas VGa× or (VGa,VO)× may act as accepters for the luminescence.

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“…In the 4H and 6H hexagonal polytypes, 3d TMs such as Ti, [14][15][16] V, [17][18][19] Cr, [19][20][21] Sc, 22 and Ni 23 are also known to substitute for Si site and the TM centers at different inequivalent-lattice sites in 4H-and 6H-SiC have been identified. However, there is unclear or no corresponding correlation found for 4d TM impurities such as Mo and Baur and co-workers 24 ), has also been observed for a single lattice site in n-type 6H-and 15R-SiC.…”

Section: Nbmentioning

confidence: 99%

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

Són¹,

Trinh²,

Gällström³

et al. 2012

Journal of Applied Physics

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High purity silicon carbide (SiC) materials are of interest from high-power high temperature applications across recent photo-voltaic cells to hosting solid state quantum bits, where the tight control of electrically, optically, and magnetically active point defects is pivotal in these areas. 4H-and 6H-SiC substrates are grown at high temperatures and the incorporation of transition metal impurities is common. In unintentionally Nb-doped 4H-and 6H-SiC substrates grown by high-temperature chemical vapor deposition, an electron paramagnetic resonance (EPR) spectrum with C 1h symmetry and a clear hyperfine (hf) structure consisting of ten equal intensity hf lines was observed. The hf structure can be identified as due to the interaction between the electron spin S ¼ 1/2 and the nuclear spin of 93 Nb. Additional hf structures due to the interaction with three Si neighbors were also detected. In 4H-SiC, a considerable spin density of $37.4% was found on three Si neighbors, suggesting the defect to be a complex between Nb and a nearby carbon vacancy (V C ). Calculations of the , support previous reported results that Nb preferentially forms an asymmetric split-vacancy (ASV) defect. In both 4H-and 6H-SiC, only one Nb-related EPR spectrum has been observed, supporting the prediction from calculations that the hexagonal-hexagonal defect configuration of the ASV complex is more stable than others. V C 2012 American Institute of Physics. [http://dx

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Electron paramagnetic resonance of scandium in silicon carbide

Cited by 17 publications

References 10 publications

Physics and Current Understanding of X-Ray Storage Phosphors

Physics and Current Understanding of X-Ray Storage Phosphors

Effects of O[sub 2] Partial Pressure and Ga Atmosphere on the Luminescence of Native Defects in β–Ga[sub 2]O[sub 3] Phosphor

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

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