Electron-optical-phonon scattering rates in a rectangular semiconductor quantum wire

Abstract

One-dimensional electron-optical-phonon interaction Hamiltonians in a rectangular quantum wire consisting of diatomic polar semiconductors are derived under the macroscopic dielectric continuum model. The scattering rates calculated in a GaAs square quantum wire show that when the quantum wire is free-standing in vacuum, the interaction by the surface-optical phonon modes is very strong and may dominate over other scattering processes, especially with dimensions of about 100 Å or less. When the wire is embedded in a polar semiconductor (AlAs to be specific), the scattering rates by the surface-optical phonon modes become generally smaller, but yet comparable to those by the confined longitudinal-optical modes as the wire dimension shrinks. A considerable decrease in the total scattering rate for optical phonons as a result of simple reduction in dimensionality is not observed in this study.

Calculation of the Ettingshausen coefficient in a Rectangular quantum wire with an infinite potential in the presence of an Electromagnetic wave (the electron - optical phonon interaction )

“…These results show us that there are some significant differences from the bulk semiconductor that the previous researches studied [1][2][3][4][5][6][7][8][9][10][11][12]. Among those, the Ettingshausen effect has just been researched in bulk semiconductors [13] and only been studied on the theoretical basis in 2-D systems [14].…”

“…Where  is the electron form factor, which is determinned by [8], different from that in cylindrical quantum wire;   q  is the potential undirected:…”

The Nonlinear Absorption of a Strong Electromagnetic Waves Caused by Confined Electrons in a Cylindrical Quantum Wire

“…This results in a number of new phenomena, which concern a reduction of the sample dimensions. These effects, for example, electron-phonon interaction and scattering rates [11,12], the linear and nonlinear optical properties [13,14], differ from those in bulk semiconductors, as well as two-dimensional systems, and the nonlinear absorption of strong EMW is not an exception. The nonlinear absorption of a strong EMW in a quantum wire will be different from the nonlinear absorption of a strong EMW in bulk semiconductors and two-dimensional.…”

“…In recent years, the optical properties in bulk semiconductors, as well as low-dimensional systems, have been investigated [1][2][3][4][5][6][7][8][9][10][11]. The linear absorption has been studied in normal bulk semiconductors 1, 2], in two dimensional systems [3][4][5][6] and in quantum wires [7,8].…”

The Nonlinear Absorption of a Strong Electromagnetic Wave in Low-dimensional Systems

“…This has resulted in a number of new phenomena, which concern a reduction of sample dimensions. These effects differ from those in bulk semiconductors, for example, electronphonon interaction effects in two-dimensional electron gases (Mori & Ando, 1989;Rucker et al, 1992;Butscher & Knorr, 2006), electron-phonon interaction and scattering rates in one-dimensional systems (Antonyuk et al, 2004;Kim et al, 1991) and dc electrical conductivity (Vasilopoulos et al, 1987;Suzuki, 1992), the electronic structure (Gaggero-Sager et al, 2007), the wave function distribution (Samuel & Patil, 2008) and electron subband structure and mobility trends in quantum wells (Ariza-Flores & Rodriguez-Vargas, 2008). The absorption of electromagnetic wave in bulk semiconductors, as well as low dimensional systems has also been investigated (Shmelev et al, 1978;Bau & Phong, 1998;Bau et al, 2002;.…”