Electron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTe

Hofmann, Detlev M.; Meyer, B. K.; Pawlik, Tomasz; Alteheld, P.; Spaeth, J.‐M.

doi:10.4028/www.scientific.net/msf.143-147.417

Cited by 7 publications

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“…16 It is generally believed that V Cd is an acceptor, the main responsible for the p-type conductivity of the as-grown material, whereas Te Cd is a donor; however, there has been much discussion about their geometry and the position of the respective defect levels. Back to the 1990s, electron paramagnetic resonance ͑EPR͒ spectroscopy and electron-nuclear double resonance have found two centers which have originally been related to the Te vacancy ͑F center͒ [17][18][19] and the Cd vacancy. 18,20 The former, an isotropic center with an ionization energy of 0.2 eV, has subsequently been assigned to Te Cd + ͑Ref.…”

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confidence: 99%

Cation-site intrinsic defects in Zn-doped CdTe

et al. 2010

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Section: Introductionmentioning

confidence: 99%

Cation-site intrinsic defects in Zn-doped CdTe

et al. 2010

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Intrinsic Point Defects in Semiconductors 1999

Watkins

2013

Materials Science and Technology

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The sections in this article are Introduction Silicon Defect Production The Silicon Vacancy Electronic Structure Effects of Lattice Relaxation – General Considerations Electrical Level Positions of the Vacancy Vacancy Migration Vacancy Interactions with other Defects The Silicon Interstitial Interstitial Migration Trapped Interstitials Theory of the Silicon Interstitial Close Frenkel Pairs Other Group IV Semiconductors Germanium Diamond Si C II – VI Semiconductors Zn Se The Zinc Vacancy Zinc Vacancy Diffusion and Interaction with other Defects Interstitial Zinc and Close Frenkel Pairs Defects on the Selenium Sublattice Other II – VI Materials The Metal Vacancy The Chalcogen Vacancy The other Intrinsic Defects Theory III – V Semiconductors Antisites The Anion Antisite V III The Cation Antisite III V Group‐ III Atom Vacancies Metal Interstitials Defects on the Group‐ V Sublattice Summary and Overview Summary Group IV Semiconductors II – VI Semiconductors III – V Semiconductors Overview Vacancies Interstitials Antisites Migration Barriers Acknowledgements

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Intrinsic Point Defects in Semiconductors 1999

Watkins¹

2000

Handbook of Semiconductor Technology Set

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Electron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTe

Cited by 7 publications

References 0 publications

Cation-site intrinsic defects in Zn-doped CdTe

Cation-site intrinsic defects in Zn-doped CdTe

Intrinsic Point Defects in Semiconductors 1999

Intrinsic Point Defects in Semiconductors 1999

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