Electron momentum density in ZnSe: Theory and experiment

Ahuja, B.L.; Heda, N.L.

doi:10.1016/j.radphyschem.2007.01.006

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Cited by 7 publications

(2 citation statements)

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“…The electronic structure of ZB mercury chalcogenides differs in a fundamental way from the electronic structure of the corresponding isoelectronic Zn and Cd systems (see for example, Wei and Zunger, 1988;Heda et al, 2007;Ahuja and Heda, 2007). Wei and Zunger (1988) have noted that the difference among Hg, Zn and Cd chalcogenides is due to the cation d band.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of some mercury chalcogenides using Compton spectroscopy

Arora¹,

Ahuja

2008

Radiation Physics and Chemistry

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Section: Introductionmentioning

confidence: 99%

Electronic structure of some mercury chalcogenides using Compton spectroscopy

Arora¹,

Ahuja

2008

Radiation Physics and Chemistry

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“…The zinc-blende variety of HgS (β-HgS, metacinnabar) is zero or near zero gap material [9]. The electronic structure of ZB mercury chalcogenides differs in a fundamental way from the electronic structure of the corresponding isoelectronic Zn and Cd systems [10][11][12]. Wei and Zunger (1988) have noted that the difference among Hg, Zn and Cd chalcogenides is due to the cation d band.…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of β-HgS

Akinlami¹

2019

Semicond. phys. quantum electron. optoelectron

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Electronic and optical properties of β-HgS have been investigated using the density functional theory. The calculated lattice parameter is 6.043 Å, the bulk modulus is 57.17 GPa, the equilibrium volume is 55.25 Å 3. From the band structure, a direct band gap of 0.00002 eV was obtained, which agreed well with other calculations. The plot of the dielectric constant against photon energy indicated several distinctive peaks. The imaginary part has a peak value of 34.99 at 0.47 eV and the real part has a peak value of 29.65 at 0.40 eV. The values obtained for electronic and optical properties of β-HgS are essentially important for applications in optoelectronics.

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