Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering

O’Regan, Terrance; Fischetti, Massimo V.

doi:10.1007/s10825-006-0072-z

Cited by 12 publications

(3 citation statements)

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“…Hess and Vogl first suggested that remote phonons [sometimes also known as Fuchs-Kliewer (FK) [9] surface optical (SO) phonons] can have a substantial effect on the mobility of Si inversion layer carriers [10]. Fischetti and co-workers later studied the effects of remote phonon scattering in MOS structures and found that high-κ oxide layers have a significant effect on carrier mobility in Si [8] and Ge [11]. This method was later applied by Xiu to study remote phonon scattering in Si nanowires [12].…”

Section: Introductionmentioning

confidence: 99%

Theory of interfacial plasmon-phonon scattering in supported graphene

Ong

Fischetti

2012

Phys. Rev. B

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One of the factors limiting electron mobility in supported graphene is remote phonon scattering.We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic anti-screening and screening of remote phonons emerge. The remote phonon-limited mobilities for SiO 2 , HfO 2 , h-BN and Al 2 O 3 substrates are computed using our theory. We find that h-BN yields the highest peak mobility, but in the practically useful high-density range the mobility in HfO 2 -supported graphene is high, despite the fact that HfO 2 is a high-κ dielectric with low-frequency modes. Our theory predicts that the strong temperature dependence of the total mobility effectively vanishes at very high carrier concentrations.The effects of polycrystallinity on IPP scattering are also discussed.

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Section: Introductionmentioning

confidence: 99%

Theory of interfacial plasmon-phonon scattering in supported graphene

Ong

Fischetti

2012

Phys. Rev. B

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“…Vastly superior electron mobility of Si 1−x Ge x on a dielectric substrate is promising use in photonics technologies continue to replace Si-based solid-state electronic devices. Although SiGe can theoretically provide semiconductor devices with better performance than Si-based devices, fabricating high quality SiGe on dielectric substrate is technically challenging due to the lattice constant mismatching between the SiGe and substrate 3–5 .…”

Section: Introductionmentioning

confidence: 99%

High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework

Kim

2019

Sci Rep

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High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si 0.15 Ge 0.85 film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890 °C substrate temperate is impractical for commercial device manufacturing due to long thermal soak, loading time, and costly process. To leverage the practical SiGe device applications, the Molten Target Sputtering (MTS) techniques is developed. The MTS is an economic and robust process from high flux density and liquid-state of molecules benefits. At 500 °C, the lowest substrate temperature, high mobility Si 0.15 Ge 0.85 film with continues morphology and 99.7% majority-orientation were grown by using the MTS. The hall electron mobilities of the Si 0.15 Ge 0.85 grown at 500 °C are 456 cm 2 V −1 s −1 and 123.9 cm 2 V −1 s −1 at 5.59 × 10 18 cm 3 and 3.5 × 10 20 cm 3 carrier concentration at 22.38 °C, respectively. The values are 550% higher hall electron mobilities than that of Si at equivalent carrier concentration and temperatures. We envision that the MTS is beneficial for the heteroepitaxy framework film growth that requires high substrate temperature to overcome the large lattice parameter mismatch between film and substrate.

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“…As V FG is increased, the density in the front channel increases exponentially, whereas the density in the back channel increases more slowly up to V FG ϳ 0.6 V and then saturates, see inset of Fig. 18 This assumed density dependence of mobility, which drops faster than the increase in electron density in the opposite channel, is required to reproduce negative g FG before the front-channel conduction takes over-the front and back channel components of subthreshold I D are indicated in Fig. As the back channel is closer to its threshold, its contribution to I D first increases and then drops due to the mobility degradation of BG .…”

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confidence: 97%

Negative transconductance in double-gate germanium-on-insulator field effect transistors

et al. 2007

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Articles you may be interested inStrong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor Appl.Transport in double-gate ͑DG͒ transistors offers unusual properties due to the coupling between the two channels. We report on room-temperature negative transconductance in germanium-on-insulator DG transistors in the subthreshold regime. The effect is due to the coupling between conducting channels, analogous to the velocity modulation transistor ͑VMT͒. Unlike the VMT, our effect can be induced by either of the gates and arises not from a difference in the channel mobilities but from partial electric field screening at low channel densities combined with the density dependence of mobility. The negative transconductance becomes weaker as gate length L G is reduced.

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Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering

Cited by 12 publications

References 12 publications

Theory of interfacial plasmon-phonon scattering in supported graphene

Theory of interfacial plasmon-phonon scattering in supported graphene

High mobility Si0.15Ge0.85 growth by using the molten target sputtering (MTS) within heteroepitaxy framework

Negative transconductance in double-gate germanium-on-insulator field effect transistors

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