Electron mobility in n-InSb from 77 to 300K

Mathur, P. C.; Kataria, N. D.; Jain, Sushil; Sharma, Vinit

doi:10.1088/0022-3719/9/4/002

Cited by 11 publications

(7 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…34 It has been found that the effect of band nonparabolicity is to lower the mobility. 35 The contribution to the mobility from ionized impurity scattering is essentially dependent on temperature through the nonparabolic effective mass. 36 The background density of neutral impurities is usually very small as compared with ionized impurities with thin spacer layer thickness.…”

Section: Calculation Of the Mobilitymentioning

confidence: 99%

See 1 more Smart Citation

Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures

Shao

Solin

Ram‐Mohan

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

For applications to extraordinary magnetoresistance ͑EMR͒ quantum well sensor design, the electron areal density n 2D , the mobility , and the products n 3D 1/2 2 and n 3D 1/2 5/2 are key physical parameters to be optimized for enhanced device sensitivity and signal to noise ratio. We model the electron areal density and carrier mobility in a two-dimensional electron gas layer developed in a ␦-doped AlInSb/ InSb heterostructure. The nonparabolic band structure due to the nature of the small energy band gap of InSb is accounted for. The detailed description of the energy dispersion and the energy dependent effective mass are obtained by the k • P method of band structure calculation. The transport properties are calculated by including contributions of scattering from ionized impurities, the background neutral impurities, the deformation potential acoustic phonons, and the polar optical phonons. We calculate the dependencies of n 2D , , n 3D 1/2 2 , and n 3D 1/2 5/2 on temperature, spacer layer thickness, doping density, and the quantum well thickness. This has important implications for EMR sensor design.

show abstract

Section: Calculation Of the Mobilitymentioning

confidence: 99%

“…A more important error source is ⌶. For InSb, several values of the deformation potential ͓7.2, 46,47 14.6, 35,48 and 30 eV ͑Ref. 49 and 50͔͒ have been quoted in the literature.…”

Section: Fig 3 ͑A͒mentioning

confidence: 99%

Optimizing the physical contribution to the sensitivity and signal to noise ratio of extraordinary magnetoresistance quantum well structures

Shao

Solin

Ram‐Mohan

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…We have determined the permittivity tensor assuming a specific value of the collision rate (ν). It is worth to be mentioned that the effective collision rate in gyro-electric materials, such as n-type InSb, depends on the mobility of the charge carriers [67,68]. The mobility and carrier concentration change as the temperature varies.…”

Section: General Equations In Bi-gyrotropic Mediamentioning

confidence: 99%

“…have been used in the relation (67). For simplicity and without loss of the generality, we assume that the third region is air ( ɛ 3 = ɛ 0 ) and graphene sheet has been deposited on the SiO2-Si substrate ( ɛ 1 = 11.9 ɛ 0 , ɛ 2 = 2.09 ɛ 0 ) with a thickness of = 5…”

Section: The Second Structure: the Graphene-based Three-layered Structurementioning

confidence: 99%

See 1 more Smart Citation

An Analytical Study of Magneto-Plasmons in Anisotropic Multi-layer Structures Containing Magnetically Biased Graphene Sheets

Heydari

Samiei

2020

Plasmonics

View full text Add to dashboard Cite

This article proposes a novel analytical model for the anisotropic multi-layer structures containing magnetically biased graphene sheets. The multi-layer structure is composed of various magnetic materials, each one has the permittivity and permeability tensors of ɛ ̿ and ̿ , respectively. An external magnetic field is applied, normal to the structure surface. Each graphene sheet, with anisotropic conductivity tensor ( ̿), has been sandwiched between two adjacent magnetic materials. Our model is used to find the dispersion relation of the structure. Now, obtaining plasmonic features of the structure, such as the effective index and propagation loss is straightforward. Four exemplary structural variants have been investigated to show the richness of the proposed general structure regarding the related specific plasmonic wave phenomena and effects. These aspects are essential to form our structural design platform to propose novel plasmonic devices such as biosensors, modulators, absorbers, transparent electrodes and tunable metamaterials in THz frequencies. A very good agreement between the analytical and full-wave simulation results is seen.

show abstract