Electron localization and interaction in bismuth thin films

Komnik, Yu. F.; Bukhshtab, E. I.; Andrievskii, V. V.; Бутенко, А. В.

doi:10.1007/bf00682253

Cited by 26 publications

(23 citation statements)

References 6 publications

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“…3 showed a higher conductivity than thicker ones (similar results have been reported in [24,29]). Since here the volume concentration no(T) is low anyhow, the surface contribution n,/d becomes very important for the total carrier concentration.…”

Section: Electtical Conductivitysupporting

confidence: 90%

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Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

Völklein

Kessler

1986

Physica Status Solidi (b)

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The thickness and temperature dependences of electrical and thermal transport coefficients (e.g. electrical conductivity, thermoelectric power, thermal conductivity) of Bil -,Sb, films are described by a non-degenerated two-band model, considering the anisotropic elliptical band structure (manyvalley model) of bulk Bil -,Sb,. The transport coefficients are measured in the temperature range 80 to 400 K on films with thicknesses 20 to 400 nm and the results are interpreted and discussed using the deduced relations.Die Schichtdicken-und Temperaturabhangigkeit elektrischer und thermischer Transportkoeffizienten (z. B. der elektrischen Leitfahigkeit, der Thermokraft, der Warmeleitfiihigkeit) von Bil -,Sb,-Schichten wird im Rahmen eines nicht entarteten Zweiband-Modells unter Berucksichtigung der anisotropen elliptischen Bandstruktur (many valley model) von massivem Bil -%Sb, beschrieben. Die Transportkoeffizienten werden im Temperaturbereich 80 bis 400 K an Schichten von 20 bis 400 nm Dicke gemessen, und die Ergebnisse werden mit den abgeleiteten Beziehungen interpretiert und diskutiert.

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Section: Electtical Conductivitysupporting

confidence: 90%

“…In addition, in Bi and Bil-,Sb, films a considerable lattice (phonon) contribution Aoz(d, T ) , depending on thickness and grain size, was found, which leads to the total thermal conductivity (29) w, T) = A & , T ) +A&, T)…”

Section: Electrical and Thermal Transport Coefficientsmentioning

confidence: 96%

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

Völklein

Kessler

1986

Physica Status Solidi (b)

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“…Those values are in agreement with those reported for 100 nm-thick Bi epitaxial films. 4,17,22 It is worth noting that the three-band model with electron and hole bulk bands together with a minority surface electron band have been recently reported to describe the magnetotransport properties on 100 nm-width Bi nanowires. 23 In the present case, however, the third band can be interpreted as an effective band which contains surface carriers characterized by an effective density and an effective mobility.…”

Section: Resultsmentioning

confidence: 99%

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

et al. 2010

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We found out that the Hall resistivity data (ρ H all ) of our original paper should be corrected due to an error in the wiring in the experimental set-up. The correction implies a change in the sign of the Hall resistivity data (−ρ H all ) presented in the original publication. This correction does not affect the interpretation of the experiments and our quantitative results remain valid, except that the third carrier band, required to account for the magnetic field evolution of the magnetoresistance and Hall resistivity, is a surface hole band (and not a surface electron band as it was reported in our original paper). This modification in the character of the surface carriers does not influence the conclusions made in the paper.In order to illustrate these points we show revised versions of Figs. 5,6,and 8, respectively. Figures 5(a) and 5(b) shows the corrected ρ H all isotherms from room temperature down to 2 K for the Bi films with thicknesses t = 100 nm and 10 nm, respectively. The remarkable change both in the magnitude and the field dependency of ρ H all with film 199904(E) (2013) thickness is shown in Fig. 6, in which the corrected ρ H all as a function of magnetic field is compared for different film thickness down to 10 nm at 2 K. Figure 8 displays the magnetic field dependence of the resistance and the corrected ρ H all at 50 K for 100-nm-thick film. Black solid line is calculated from the two band model (electron bulk and hole bulk band). Red solid line includes the third carrier band which has been interpreted as an effective band which contains surface carriers characterized by an effective density and an effective mobility. The values of the mobility μ i and the carrier density n i obtained for each band are not affected by the correction of the sign of the ρ H all and the results listed in the original Table I remain valid. However, the correction in the sign of ρ H all implies a change in the sign of the Hall coefficient R s of the surface band, which becomes positive (instead of negative, as was reported in our original paper). This implies that the surface carriers are holes with p s and μ p s (instead of electrons with n s and μ n s ). This minor change does not affect our conclusions.We would like to thank M. C. Martínez Velarte for drawing our attention to the wiring problem. 199904-2Role of the surface states in the magnetotransport properties of ultrathin bismuth films We have investigated the magnetotransport properties of ultrathin films of Bi grown on thermally oxidized Si͑001͒ substrates with thickness ranging from 10 to 100 nm at temperatures down to 2 K and in magnetic fields up to 90 kOe. Remarkable differences both in temperature and field dependence of the Hall resistivity are found for the films with thickness above and below 20 nm. These observations can be explained due to the presence of surface states, which play an important role in determining the electronic transport properties of the thinnest films. The estimated surface carrier density 4 ϫ 10 13 cm −2 at room temp...

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“…Quantum transport in Bi films has been extensively studied [2][3][4][5][6][7][8][9] as have been self-assembled wires [10][11][12][13][14][15] . In particular, spin-dependent quantum transport in the form of weak-antilocalization has been observed in Bi films [3][4][5][6][7][8][9] and a nanowire array 14 . However, quantum transport in purpose-designed Bi thin film mesoscopic geometries has not enjoyed equal attention 3,17 and lags behind achievements in semiconductor heterostructures 18 .…”

mentioning

confidence: 99%

“…However, experiments often find that at low T , τ φ saturates to a finite value τ 0 φ in many different systems. Saturation has been observed in twodimensional electron systems (2DESs) in semiconductor heterostructures and wires fabricated from 2DESs 19,20 , and in various metal wires and films 19 although not in Bi films [3][4][5][6][7]9 . The origin of τ 0 φ is still debated, with some arguments for magnetic scattering from trace magnetic impurities, electron interaction with long wavelength radiation, and fluctuations in the electromagnetic background 19,21 .…”

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confidence: 99%

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

Rudolph

Heremans

2011

Phys. Rev. B

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We present low temperature magnetoresistance measurements on lithographically defined bismuth wires. The phase coherence time and the spin-orbit scattering time are obtained by analysis of weak-antilocalization, with values for the phase coherence time supported by analysis of the universal conductance fluctuations present in the wires. We find that the phase coherence time is dominated by electron-phonon scattering above ≈ 2 K and saturates below that temperature, with saturation delayed to a lower temperature in wider wires. The spin-orbit scattering time shows a weak temperature dependence above 2 K, and also shows a dependence on wire width. The spinorbit scattering time increases as the width is reduced, as also observed in wires fabricated from spin-orbit coupled two-dimensional systems in semiconductor heterostructures. The similarity is discussed in the light of weak-antilocalization in the two-dimensional strongly spin-orbit coupled Bi(001) surface states.

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Electron localization and interaction in bismuth thin films

Cited by 26 publications

References 6 publications

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

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Electron localization and interaction in bismuth thin films

Cited by 26 publications

References 6 publications

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi1–xSbx films in an anisotropic, non‐degenerate two‐band model

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi1–xSbx films in an anisotropic, non‐degenerate two‐band model

Role of the surface states in the magnetotransport properties of ultrathin bismuth films

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

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Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model

Temperature and thickness dependence of electrical and thermal transport coefficients of Bi_1–xSb_x films in an anisotropic, non‐degenerate two‐band model