Electron Irradiation of GaAsP LEDs

Dimiduk, K. C.; Ness, Christian Quarles; Foley, James

doi:10.1109/tns.1985.4334060

Cited by 11 publications

(2 citation statements)

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“…Several studies [32][33][34][35][36][37][38][39][40] have shown that radiation-induced displacement damage in the semiconductor lattice 01' the active, light-producing region in LEDs and ILDs is the most serious effect of a typical mixed radiation environment. The key to understanding the detrimental effects of lattice damage on the performance of LEDs lies in an examination of the operating mechanisms of these devices.…”

Section: Leds and Laser Diodesmentioning

confidence: 99%

Radiation effects considerations for the application of photonics in space systems

Barnes

Swift²,

Johnston³

et al. 1998

1998 IEEE Aerospace Conference Proceedings (Cat. No.98TH8339)

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Ken .label @ g sfc.nasa.gov (301) 286-9936Abstruct-As civilian and military spacecraft continue to evolve, meeting performance demands will become particularly challenging because performance levels will be constrained by severe cost and weight restrictions. To meet these challenges, new technologies, such as photonics, w i l l be employed that can provide desired performance levels within the framework dictated by these constraints. For the insertion of a new technology into a spacecraft to be successful, the radiation hardness assurance (RHA) of the technology must be established so that the mission is not jeopardized by exposure to the space radiation environment. In this paper we discuss the RHA issues associated with the infusion of photonics into space systems, both military and civilian. These issues w i l l be contrasted with similar problems that have been encountered in the more traditional area of RHA for Si microcircuits.

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Section: Leds and Laser Diodesmentioning

confidence: 99%

Radiation effects considerations for the application of photonics in space systems

Barnes

Swift²,

Johnston³

et al. 1998

1998 IEEE Aerospace Conference Proceedings (Cat. No.98TH8339)

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“…The fact occurs when deep-level generation-recombination (GR) centers are induces by displacement damages. [3] However, a few studies perform on radiation source and fluence rate dependence of device performance degradation together with recovery behavior after irradiation resulting from thermal annealing. This paper reports on radiation damages of GaAlAs LEDs by 2-MeV electrons and 70-MeV protons irradiation at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs

Ohyama

Takakura

Nagano

et al. 2007

SSP

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The degradation and recovery behavior of device performance on GaAlAs LEDs (Light emitting diodes) irradiated by 2-MeV electrons and 70-MeV protons are investigated. The reverse current increases after irradiation, while the capacitance decreases. The device performance degradation is proportional with fluence. For electron irradiation, fluence rate is also effective for degradation. Low fluence rate shows more large degradation compared to high fluence rate resulting from heat impact in bulk. DLTS measurement reveals the DX center in epitaxial substrate, and this spectrum increases with fluence. The radiation damage of proton is larger than that of electron irradiation, which is caused by the difference of mass and possibility of nuclear collision for the formation of lattice defects. After irradiation, the device performance recovers by thermal annealing.

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