The degradation and recovery behavior of device performance on GaAlAs LEDs (Light
emitting diodes) irradiated by 2-MeV electrons and 70-MeV protons are investigated. The reverse
current increases after irradiation, while the capacitance decreases. The device performance
degradation is proportional with fluence. For electron irradiation, fluence rate is also effective for
degradation. Low fluence rate shows more large degradation compared to high fluence rate
resulting from heat impact in bulk. DLTS measurement reveals the DX center in epitaxial substrate,
and this spectrum increases with fluence. The radiation damage of proton is larger than that of
electron irradiation, which is caused by the difference of mass and possibility of nuclear collision
for the formation of lattice defects. After irradiation, the device performance recovers by thermal
annealing.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.