Electron irradiation during Schottky gate metal evaporation and its effect on the stability of InGaAs/AlGaAs HEMTs

Kimura, Tamotsu; Shigemasa, Ryoji; Ohshima, Tomoyuki

doi:10.1016/s0038-1101(97)00089-0

Cited by 3 publications

(5 citation statements)

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“…In the past decades, many researchers have done an immense amounts of research about the particles irradiation influence on HEMT by theory modeling and irradiation experiments [15][16][17][18]. Lv et al and Liu et al have made comprehensive analyses of proton irradiation on the output and transfer characteristics of AlGaN/GaN HEMTs, which indicated that the output and transfer characteristics were almost unchanged at low proton fluence, and with the increase of proton fluence, the characteristics got deteriorated more seriously [15,16].…”

Section: Introductionmentioning

confidence: 99%

“…Kimura et al was studied the variation of Schottky gate characteristics InGaAs/GaAs HEMTs induced by electron irradiation. The results showed that the deterioration of the Schottky gate characteristics were attributed to the deep traps introduced at the gate metal and GaAs barrier layer [17]. However, these researches are mainly focused on GaN and GaAs based HEMTs and only a few papers are studied the irradiation effects on InP-based HEMT devices.…”

Section: Introductionmentioning

confidence: 99%

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2021

JOR

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In this paper, the influence of electron irradiation on DC and RF characteristics of InP-based HEMTs with different gate widths were studied by irradiation experiment. The results show that the value of channel current (I DS ) and transconductance (g m ) are decreased for device with different gate width after electron irradiation, which is mainly due to the reduction of mobility in the channel by the irradiation-induced defects. However, the carrier concentration in the channel has a little change. Compared with the device with 100 μm gate width, I DS and g m of the device with 40 μm gate width were decreased by 1.5% and 3%.Meanwhile, the forward gate current decreased due to the increase of series resistance of gate contact caused by electron irradiation. The interface defects induced by electron irradiation induced the increase of the reverse gate current. Additionally, the current gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) were reduced by 19.8% and 10.9% for device with 40 μm gate width, and the f T and f max were only reduced by 7.1% and 8.2% for device with 100 μm gate width. The experimental results indicate that designing a reasonable structure is an effective method to enhance the radiation resistance in InP-based HEMTs, and this method can also be utilized in other semiconductor devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Untitled

2021

JOR

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“…Therefore, the anti radiation characteristics of semiconductor devices and integrated circuits are the key to ensure the reliability and long life of the electronic equipment. In the past years, the irradiation effects of GaN and GaAs based HEMTs have been widely studied [16][17][18][19][20]. The electron irradiation effects on InGaAs/GaAs HEMTs was studied by Kimura et al, which demonstrated that the degeneration of the Schottky gate characteristics were due to the deep traps introduced at the gate metal and GaAs barrier layer [18].…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanisms of InP-based high-electron-mobility transistors under 1 MeV electron irradiation

Sun

Yang

Zhong

et al. 2020

J. Phys. D: Appl. Phys.

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In this paper, InP-based high electron mobility transistors were investigated for an electron fluence of 5 × 1015 cm−2 at 1 MeV. The channel current and transconductance were reduced by 7.8% and 12.6% after electron irradiation. Meanwhile, the ION/IOFF ratio was reduced from 2.47 × 1012 to 2.16 × 102 and the SS was increased from 116.8 m mV dec−1 to 125.9 mV dec−1 after electron irradiation. To understand the degeneration behavior, the carrier concentration and mobility were calculated by the charge control model. Unlike, previous studies on the degradation behavior upon irradiation, the results show that these changes could only be attributed to the reduction of mobility in the channel by the irradiation-induced defects. The AFM and pulsed I–V curves measurement results proved that the Coulomb scatter effect was increased after electron irradiation, which led to decrease the carrier mobility. Besides, the current gain cut-off frequency (f T) was reduced from 139.4 GHz to 125.5 GHz and maximum oscillation frequency (f max) was reduced from 226.2 GHz to 206.1 GHz after electron irradiation. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance and the channel resistance.

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“…In the space environment, various high-energy particles and rays damage electronic devices, resulting in performance degradation of the devices and even the abnormality of electronic systems [11,12]. Admittedly, the irradiation damage mechanism of various devices with III-V materials have been widely reported [13,14,15,16,17,18]. Oh et al studied the effects of electron irradiation on the gate leakage current of AlGaN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

“…The results showed that the gate leakage current significantly decreased, which was due to the neutralization of nitrogen vacancies, and that the removal of oxygen impurities induced the defects after electron irradiation [14]. Kimura et al performed a systematic study of electron irradiation effects on the Schottky gate of InGaAs/GaAs HEMTs which showed that deep traps were introduced at the gate metal and GaAs layer [15]. The impact of proton irradiation on the direct current (DC) performance of AlGaN/GaN HEMTs was investigated by Liu et al, which indicated that the DC characteristics were degraded more seriously at high proton fluence.…”

Section: Introductionmentioning

confidence: 99%

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

et al. 2019

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In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 1014 cm−2, 1 × 1015 cm−2, to 1 × 1016 cm−2. Both the channel current and transconductance dramatically decreased as the irradiation fluence rose up to 1 × 1016 cm−2, whereas the specific channel on-resistance (Ron) exhibited an apparent increasing trend. These changes could be responsible for the reduction of mobility in the channel by the irradiation-induced trap charges. However, the kink effect became weaker with the increase of the electron fluence. Additionally, the current gain cut-off frequency (fT) and maximum oscillation frequency (fmax) demonstrated a slightly downward trend as the irradiation fluence rose up to 1 × 1016 cm−2. The degradation of frequency properties was mainly due to the increase of gate-drain capacitance (CGD) and the ratio of gate-drain capacitance and gate-source capacitance (CGD/CGS). Moreover, the increase of Ron may be another important factor for fmax reduction.

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Electron irradiation during Schottky gate metal evaporation and its effect on the stability of InGaAs/AlGaAs HEMTs

Cited by 3 publications

References 10 publications

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Degradation mechanisms of InP-based high-electron-mobility transistors under 1 MeV electron irradiation

Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

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