Electron induced nanodeposition of tungsten using field emission scanning and transmission electron microscopes

Abstract

Articles you may be interested inField electron emission properties from zinc oxide nanostructures AIP Conf. Proc. 1502, 426 (2012); 10.1063/1.4769161 Three-dimensional shapes and distribution of FePd nanoparticles observed by electron tomography using highangle annular dark-field scanning transmission electron microscopy Fabrication of Mn-doped ZnO diluted magnetic semiconductor nanostructures by chemical vapor deposition J. Appl. Phys. 99, 08M119 (2006); 10.1063/1.2173235Fabrication and characterization of solid-state nanopores using a field emission scanning electron microscope Electron beam induced chemical vapor deposition ͑EBI-CVD͒ is one of the promising methods for nanofabrication. EBI-CVD has generally been carried out in conventional scanning electron microscopes and the minimum size of the deposits was in the range between 20 and 300 nm. In this study, a field emission gun scanning electron microscope ͑FE-SEM͒ and a field emission gun transmission electron microscope ͑FE-TEM͒ with gas introduction systems were employed for deposition using a W͑CO͒ 6 precursor in order to reduce the size of deposits. Dots, 15-20 nm in diameter, were produced using the FE-SEM. The dots consist mainly of tungsten with small amounts of carbon and oxygen. By using the FE-TEM, the diameter of the dots can be reduced to 3.5 nm. The relationship between probe size and dot diameter is discussed. Rods, the diameter of which was 8 nm, were also fabricated by scanning the beam position in the FE-TEM. Deposits produced by FE-TEM are smaller than those by conventional electron microscopes.

Fabrication of layered nanostructures by successive electron beam induced deposition with two precursors: protective capping of metallic iron structures

“…Recently, Bernau et al presented the possibility of tailoring the chemical composition of deposits by simultaneously dosing Co 2 (CO) 8 and hydrocarbons from the residual gas, and by using certain electron irradiation strategies [27]. Herein, we expand the EBID technique, which usually applies only one precursor, to the successive usage of two different, dedicated precursors to locally engineer laterally well-defined layered nanostructures.…”

Nanofabrication by advanced electron microscopy using intense and focused beam∗

“…In particular, downsizing the deposits obtained using a field-emission-TEM and -STEM (FE-TEM and FE-STEM), which generate a relatively high energy electron beam of more than 200 keV and a small probe of less than 1 nm, will make it possible to fabricate much smaller and denser devices. Figure 9(a) shows a bright-field image of a dot array formed on a Si substrate using an FE-TEM at room temperature [15]. The precursor gas was W(CO) 6 .…”

“…As the electron beam can be focused onto a region of one nanometer to several hundred nanometers using a modern electron microscope, a solid deposit is formed in the irradiated regions on the surface of the substrate. Schematic illustrations of the experimental setup for EBID are shown in figure 1 and the details of the experiments are given elsewhere [14][15][16][17][18][19]. For example, when the vapor of tungsten hexacarbonyl (W(CO) 6 )is used as a precursor gas, the electron irradiation decomposes the gas into W, CO, C, O and various molecular species.…”

“…Hence, it was believed that the resolution limit of EBID was at most 15 nm. However, we have attempted to minimize the secondary-electron effect by using a field-emission scanning transmission electron microscope (FE-STEM) [13][14][15][16]. Mitsuishi et al [13] successfully fabricated nanodots of 3.5 nm diameter using a 200 keV FE-STEM.…”

A Nanowire Produced by Electron Beam-Induced Deposition and Its Electric Properties

“…Electron beam induced deposition (EBID) is one of the promising techniques to produce position-controlled nanometer-sized structures with high flexibility in their shape. It has been shown that free-standing nano-wires of less than 10 nm in thickness can be fabricated using an EBID technique [3,4]. In this paper, we report the resistivity measurements of one individual nanowire produced by EBID.…”