Electron induced deposition and in situ etching of CrOxCly films

Wang, S.; Sun, Yiyong; White, John

doi:10.1016/j.apsusc.2004.11.060

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…A pressure threshold of 8.6ϫ 10 −4 Pa was found for deposition from CrO 2 Cl 2 . 98 Below this pressure, no Cr deposition was observed. It was found that etching of the ͑Cl-deficient͒ CrO x Cl y film occurred during postdeposition irradiation in the presence of Cl 2 .…”

Section: Precursor Pressurementioning

confidence: 99%

“…In SEMs the beam size and/or the beam current usually changes together with the acceleration voltage. 96 In deposition experiments, occasionally the electron currents are measured in situ, 97,98 but in general the yield of emitted electrons is not measured. Elaborate models are being developed 57 that can give valuable insight into how balances shift during deposit growth.…”

Section: B Electron Energymentioning

confidence: 99%

See 1 more Smart Citation

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

483

577

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An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied ͑current density, acceleration voltage, scan patterns, etc.͒. Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and ͑as far as possible͒ interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters ͑such as the local precursor pressure͒ are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally, there is a limited understanding of the mechanism of electron induced precursor dissociation. In many cases, the deposit composition is not directly dependent on the stoichiometric composition of the precursor and the electron induced decomposition paths can be very different from those expected from calculations or thermal decomposition. The dissociation mechanism is one of the key factors determining the purity of the deposits and a better understanding of this process will help develop electron beam induced deposition into a viable nanofabrication technique.

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Section: Precursor Pressurementioning

confidence: 99%

Section: B Electron Energymentioning

confidence: 99%

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

483

577

View full text Add to dashboard Cite

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“…It should be noted that diffusion inside of the scan area may also take place. This entire process which is a combination of adsorption, desorption, diffusion and decomposition has been described by a differential equation in detail elsewhere [6].…”

Section: Electron Beam Dwell Time Dependencementioning

confidence: 99%

“…Other etching agents which have been successfully utilized in conjunction with electron beam induced etching include nitrosyl chloride (NOCl) [5] which is capable of selectively etching chromium (Cr) and alumina (Al 2 O 3 ) on SiO 2 . Wang et al [6] reported the successful electron beam induced etching of CrO x using pure chlorine gas in an Auger electron spectrometer with a broad electron beam source. An etching effect of the underlying silicon substrate has also been briefly mentioned in this paper.…”

Section: Introductionmentioning

confidence: 99%

Focused electron beam induced etching of silicon using chlorine

Roediger¹,

Hochleitner²,

Bertagnolli³

et al. 2010

Nanotechnology

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A new beam-assisted process for removing silicon from a surface in the nanometer scale in a conventional scanning electron microscope is presented. This approach is based on focused electron beam induced etching with pure chlorine gas being used as the precursor. In contrast to the established etching process using a focused ion beam (with or without the addition of a precursor), no amorphization and gallium implanting of the substrate takes place. The observed low etch rates facilitate removal with sub-nanometer precision. No spontaneous etching of silicon as in the case of xenon difluoride was observed. Etch rates of up to 4 nm min( - 1) could be achieved as well as a minimum feature size of below 80 nm. The effect of etching parameters like electron beam energy, electron beam accelerating voltage or pixel spacing were systematically examined. Finally, the underlying etching mechanism in terms of secondary electron interactions and precursor replenishment is discussed.

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“…In the following list, a single reference is given for each material (generally the most recent publication known to us); for a more complete cross-reference the reader is referred to one of the many general EBID reviews such as Utke et al [17]: Al [18], Au [19], C (abundant literature), Co [20], Cr [21], Cu [22], Fe [23], GaAs [24], Ga [25], Ge [26], Ir [27], Mn [28], Mo [29], Ni [30], Os [31], Pb [32], Pd [33], Pt [34], Rh [35], Ru [31], Si/SiO x [36], Sn [37], Ti [38] and W [39]. The growth of the deposit can be directed to take the shape of the structure that one wishes to fabricate; indeed such exotic three-dimensional structures as nanobridges can be easily produced (figure 2).…”

Section: Introductionmentioning

confidence: 99%

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

Mulders²,

2009

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The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast 'point-and-shoot' creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One significant drawback to date has been the low purity level of the deposition. This has two independent causes: (1) partial or incomplete decomposition of the precursor molecule and (2) contamination from the residual chamber gas. This frequently limits the functionality of the structure, hence it is desirable to improve the decomposition and prevent the inclusion of contaminants. In this contribution we review and compare for the first time all the techniques specifically aimed at purifying the as-deposited impure EBID structures. Despite incomplete and scattered data, we observe some general trends: application of heat (during or after deposition) is usually beneficial to some extent; working in a favorable residual gas (ultra-high vacuum set-ups or plasma cleaning the chamber) is highly recommended; gas mixing approaches are extremely variable and not always reproducible between research groups; and carbon-free precursors are promising but tend to result in oxygen being the contaminant species rather than carbon. Finally we highlight a few novel approaches.

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Electron induced deposition and in situ etching of CrOxCly films

Cited by 7 publications

References 6 publications

A critical literature review of focused electron beam induced deposition

A critical literature review of focused electron beam induced deposition

Focused electron beam induced etching of silicon using chlorine

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

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