Electron-hole collisions in concentrator solar cells

Kane, D.E.; Swanson, R.M.

doi:10.1109/pvsc.1988.105754

Cited by 54 publications

(57 citation statements)

References 6 publications

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“…10,22,23 The Sinton tool was also used for minority carrier lifetime and J 0e measurements. The J 0e was extracted at 298 K from the injection level-dependent carrier lifetime curve, based on the method originally developed by Kane and Swanson, 34 which was later improved by Blum et al and is now used in WCT-120. 35 Note that J 0e tends to be underestimated with the models previously implemented.…”

Section: Methodsmentioning

confidence: 99%

Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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Recombination processes in passivated boron-implanted black silicon emitters In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities S n through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J 0e ) is obtained in implanted bSi emitters, reaching 20 fA/cm 2 6 5 fA/cm 2 at a sheet resistance of 170 X/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J 0e obtained. Published by AIP Publishing. [http://dx

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Section: Methodsmentioning

confidence: 99%

Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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“…The recombination current parameters J 0c of the c-Si(n þ )/a-Si:H(i)/Al and c-Si(p þ )/a-Si:H(i)/Al stacks were extracted from the PCD data using an intrinsic carrier concentration of n i ¼ 8.95 Â 10 9 cm À3 (at 25 C) and the well-known Kane and Swanson method. 15 The parameter J 0c is a representation of the total minority carrier recombination occurring in the sub-surface diffusion region (predominantly Auger recombination) and at the diffused surface (predominantly Shockley-Read-Hall recombination).…”

Section: A Sample Preparationmentioning

confidence: 99%

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Bullock

Yan

Wan

et al. 2014

Journal of Applied Physics

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Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16 nm) the recombination loss at metal-contacted phosphorus (n+) and boron (p+) diffused surfaces decreases by factors of ∼25 and ∼10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ∼ 50 mΩ cm2 for n+ and ∼100 mΩ cm2 for p+ surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n+ surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

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“…2,8 Before deposition a possibly remaining film from previous experiments was stripped off and the samples received a conventional RCA cleaning with a final dip in di- 7 The passivation quality of the films was quantified by the emitter saturation current density J 0e of the p + -emitters. The emitter saturation current density J 0e was determined from contactless photoconductance decay measurements in both the quasi-steady-state and transient mode ͑Sinton WCT-100͒ 10 from the relation proposed by Kane and Swanson 11 1 eff − 1…”

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confidence: 99%

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

Hoex

Schmidt

Bock

et al. 2007

Applied Physics Letters

376

239

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From lifetime measurements, including a direct experimental comparison with thermal SiO2, a-Si:H, and as-deposited a-SiNx:H, it is demonstrated that Al2O3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 1019cm−3. The Al2O3 films, synthesized by plasma-assisted atomic layer deposition and with a high fixed negative charge density, limit the emitter saturation current density of B-diffused p+-emitters to ∼10 and ∼30fA∕cm2 on >100 and 54Ω∕sq sheet resistance p+-emitters, respectively. These results demonstrate that highly doped p-type Si surfaces can be passivated as effectively as highly doped n-type surfaces.

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Electron-hole collisions in concentrator solar cells

Cited by 54 publications

References 6 publications

Recombination processes in passivated boron-implanted black silicon emitters

Recombination processes in passivated boron-implanted black silicon emitters

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

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