Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

Hoex, Bram; Schmidt, Jan; Bock, Robert; Altermatt, P.P.; Sanden, van de Mcm Richard; Kessels, Wmm Erwin

doi:10.1063/1.2784168

Cited by 376 publications

(252 citation statements)

References 14 publications

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“…23,36,43,[46][47][48][49][50] The performance of textured emitters can be simulated in two dimensions, which thus allows using two-dimensional bSi doping profiles generated by a separate process simulator. 48 However, we show that, implying some approximations in the bSi regions, useful insight on bSi emitter recombination mechanisms can be obtained using the PC1D freeware.…”

Section: Discussion On the Passivation Quality And Extraction Of mentioning

confidence: 99%

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Recombination processes in passivated boron-implanted black silicon emitters

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et al. 2017

Journal of Applied Physics

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Recombination processes in passivated boron-implanted black silicon emitters In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities S n through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J 0e ) is obtained in implanted bSi emitters, reaching 20 fA/cm 2 6 5 fA/cm 2 at a sheet resistance of 170 X/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J 0e obtained. Published by AIP Publishing. [http://dx

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Section: Discussion On the Passivation Quality And Extraction Of mentioning

confidence: 99%

“…43,44 Therefore, we focus first on this passivation layer and study the way it affects samples with various boron profiles. The emitter saturation current J 0e , which is a common measure for surface passivation and emitter recombination, is plotted in Fig.…”

Section: B Surface Passivationmentioning

confidence: 99%

Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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“…In reality the value of S lies in-between (0 < S < S effmax ) depending on the chosen injection level (Δn) [8,11,12,27,28]. Table 3 presents the surface recombination velocities (SRV) extracted from the lifetime measurements using equation (5) for 200 μm thick wafers covered with the different dielectrics.…”

Section: Carrier Lifetime Measurementsmentioning

confidence: 99%

Passivation effects of atomic-layer-deposited aluminum oxide

et al. 2013

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Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n-and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Q f ∼ 10 12 −10 13 cm −2 ) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasmaenhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T -ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Q f and Dit extraction through Capacitance-Voltage-Conductance (C-V -G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V -G parameters (Q f ,Dit) on the injection dependent lifetime measurements τ (Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

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“…Less than a decade ago, it was reported that Al 2 O 3 films prepared by atomic layer deposition (ALD) provide superior passivation of p and p þ -type Si surfaces, which was technologically challenging at that time [1][2][3]. The excellent passivation by Al 2 O 3 can be related to a very low interface defect density D it (o10 11 cm À 2 ) on Si, which is essential for chemical passivation.…”

Section: Introductionmentioning

confidence: 99%