Electron field emission studies on ZnO nanowires

Liao, Lei; Li, J.C.; Wang, Duofa; Liu, C.; Fu, Qiang

doi:10.1016/j.matlet.2005.03.014

Cited by 27 publications

(10 citation statements)

References 7 publications

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“…Even the same thermal conditions of the experiment can lead to the various internal structure forms of the deposited films: i.e. crystalline, polycrystalline and amorphous [9,38,39]. Therefore it is much easier obtaining an amorphous thin film on the amorphous substrate and vice versa.…”

Section: Experimental Results Of Shgmentioning

confidence: 99%

Transparent amorphous zinc oxide thin films for NLO applications

et al. 2014

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Section: Experimental Results Of Shgmentioning

confidence: 99%

Transparent amorphous zinc oxide thin films for NLO applications

et al. 2014

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“…Figure 7 shows a comparison in the emission current and corresponding current density of nanowires reported in this paper and that reported in previous literatures [ 19 , 20 , 23 , 43 , 44 , 45 , 46 , 47 , 48 ]. We note that the current increases with the increase of emission area ( Figure 7 a); however, because the emission area increase is disproportionately larger than the emission current increase of the samples, the current density decreases with increasing emission area ( Figure 7 b).…”

Section: Resultsmentioning

confidence: 61%

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

et al. 2021

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Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of ~20 mA could be obtained from large-area In-doped sample with a 4.8 × 4.8 cm2 area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.

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“…The field emission properties of CdTe nanostructures are unexplored hence comparison for low turn‐on field between II–VI group semiconducting nanowires and present study has been done as shown in Table 1 [20–24]. It indicates that turn‐on field for CdTe nanowires in the present work is lower than II–VI group semiconducting nanowires.…”

Section: Resultsmentioning

confidence: 75%

Vapour–liquid–solid‐assisted growth of cadmium telluride nanowires and their field emission properties

Bagal

Patil

Suryawanshi

et al. 2016

Micro & Nano Letters

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Cadmium telluride (CdTe) nanowires were grown on silicon substrate (100) by thermal evaporation method. The synthesised CdTe nanowires were characterised by X-ray diffraction, field emission scanning electron microscope, energy-dispersive analysis of X-ray, and photoluminescence techniques. The field emission characteristics have been investigated at room temperature. The J-E and It characteristics were measured in a planar diode configuration at the base pressure of 1 × 10 −8 mbar. Turn-on field defined for the emission current density of 0.1 µA/cm 2 has been found to be 2.2 V/µm and on the application of high applied electric field of 7.8 V/µm maximum current density of 210 µA/cm 2 has been achieved. The It measurement has been studied at the preset of 1 µA emission current for the duration of 3 h. Overall nature of emission current has been seen to stable for duration of the measurement. To the best of the authors' knowledge, this is a first report on field emission study of CdTe nanowires.

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Electron field emission studies on ZnO nanowires

Cited by 27 publications

References 7 publications

Transparent amorphous zinc oxide thin films for NLO applications

Transparent amorphous zinc oxide thin films for NLO applications

High Current Field Emission from Large-Area Indium Doped ZnO Nanowire Field Emitter Arrays for Flat-Panel X-ray Source Application

Vapour–liquid–solid‐assisted growth of cadmium telluride nanowires and their field emission properties

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