Vapour–liquid–solid‐assisted growth of cadmium telluride nanowires and their field emission properties

Abstract

Cadmium telluride (CdTe) nanowires were grown on silicon substrate (100) by thermal evaporation method. The synthesised CdTe nanowires were characterised by X-ray diffraction, field emission scanning electron microscope, energy-dispersive analysis of X-ray, and photoluminescence techniques. The field emission characteristics have been investigated at room temperature. The J-E and It characteristics were measured in a planar diode configuration at the base pressure of 1 × 10 −8 mbar. Turn-on field defined for the emission current density of 0.1 µA/cm 2 has been found to be 2.2 V/µm and on the application of high applied electric field of 7.8 V/µm maximum current density of 210 µA/cm 2 has been achieved. The It measurement has been studied at the preset of 1 µA emission current for the duration of 3 h. Overall nature of emission current has been seen to stable for duration of the measurement. To the best of the authors' knowledge, this is a first report on field emission study of CdTe nanowires.

Enhanced Field Emission Properties of Au/SnSe Nano-heterostructure: A Combined Experimental and Theoretical Investigation

“…A drastic reduction in the turn-on field from 2.25 V/µm for the SnSe NSs to 1.25 V/µm for the Au/ SnSe NHS was observed. The observed turn-on field of the Au/SnSe NHS is found to be superior when compared with previously investigated semiconducting chalcogenides and NHS as summarized in Table 1 [16][17][18][30][31][32][33][34][35] . The enhanced field emission characteristics can be ascribed to the surface modification of Au/SnSe NHS as evident in the FESEM analysis ( Fig.…”

CdTe Nanowires by Au-Catalyzed Metalorganic Vapor Phase Epitaxy

“…Bismuth (Bi) catalyzed growth of wurtzite phase CdTe nanowires by pulsed laser deposition has been demonstrated in the 365–390 °C interval, although Bi evaporation proclivity at these temperatures makes difficult to nucleate/control the amount of catalyst seeds onto the substrate surface. Au-catalyzed growth of zincblend CdTe nanowires well above 450 °C has been reported by molecular beam epitaxy, physical vapor deposition, close-spaced sublimation (CSS), and thermal evaporation . No report exists yet in the literature on CdTe nanowires grown by Au-catalyzed metalorganic vapor phase epitaxy (MOVPE).…”

“…Au-catalyzed growth of zincblend CdTe nanowires well above 450 °C has been reported by molecular beam epitaxy, 19 physical vapor deposition, 20 close-spaced sublimation (CSS), 21 and thermal evaporation. 22 No report exists yet in the literature on CdTe nanowires grown by Au-catalyzed metalorganic vapor phase epitaxy (MOVPE).…”

Enhanced conductivity of anatase TiO 2 nanowires by La and Co co‐doping

“…In the past decades, one-dimensional (1D) nanomaterials have been the subject of great interest due to their distinct electronic and photoelectric performance [1][2][3][4][5][6]. Many kinds of 1D nanostructures have been synthesised and nanodevices have been prepared [7][8][9][10]. Owing to its unique morphology with a large aspect ratio, the quasi-1D electronic transport channels can be formed with the quantum confinement effect [11][12][13].…”