Electron field emission and surface morphology of a-C and a-C:H thin films

Анищик, В. М.; Углов, В.В.; Kuleshov, A.K.; Filipp, A.R.; Rusalsky, D.P.; Astashynskaya, M. V.; Самцов, М. П.; Кузнецова, Т. А.; Thièry, F.; Pauleau, Y.

doi:10.1016/j.tsf.2004.11.153

Cited by 22 publications

(7 citation statements)

References 17 publications

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“…The values of the roughness parameters determined with the application of the atomic force microscope (AFM) can be found in academic papers on the electronic properties of the thin films of Cr and CrSi 2 [ 1 , 2 , 5 , 6 , 28 , 29 , 30 ]. However, grain size investigation results are far more rarely found, although the atomic force microscope is a well-suited tool for the evaluation of the grain size in polycrystalline films [ 31 , 32 ]. For example, in [ 2 ], the grain size of the Cr film was close to that obtained in this work and was 13 and 14 nm at the negative bias voltage on the substrate of 50 and 250 V. At the negative bias on the substrate of 450 V, the grain size was 20 nm [ 2 ].…”

Section: Resultsmentioning

confidence: 99%

Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon

Кузнецова

Lapitskaya

Solovjov³

et al. 2021

Nanomaterials

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The changes in the morphology and the electrophysical properties of the Cr/n-Si (111) structure depending on the rapid thermal treatment were considered in this study. The chromium films of about 30 nm thickness were deposited via magnetron sputtering. The rapid thermal treatment was performed by the irradiation of the substrate’s back side with the incoherent light flux of the quartz halogen lamps in nitrogen medium up to 200–550 °C. The surface morphology was investigated, including the grain size, the roughness parameters and the specific surface energy using atomic force microscopy. The resistivity value of the chromium films on silicon was determined by means of the four-probe method. It was established that at the temperatures of the rapid thermal treatment up to 350 °C one can observe re-crystallization of the chromium films with preservation of the fine grain morphology of the surface, accompanied by a reduction in the grain sizes, specific surface energy and the value of specific resistivity. At the temperatures of the rapid thermal treatment from 400 to 550 °C there originates the diffusion synthesis of the chromium disilicide CrSi2 with the wave-like surface morphology, followed by an increase in the grain sizes, roughness parameters, the specific surface energy and the specific resistivity value.

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Section: Resultsmentioning

confidence: 99%

Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon

Кузнецова

Lapitskaya

Solovjov³

et al. 2021

Nanomaterials

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“…7 and 8 and Table II). For the textured sample, we exclude the possibility of a lowering of originating from amorphous carbon ( ¼ 1:5 eV), 27) which can be formed on the tips of pyramids by current-induced evaporation. To test this assumption, field emission properties of the textured Si itself ( ¼ 4:15 eV) 28) and an amorphous carbon film (5 nm) deposited on a textured Si substrate were evaluated and no emission current was detected from either sample up to 5.3 V/mm.…”

Section: Field Emission Properties Of Swcnts Prepared On Textured Submentioning

confidence: 99%

Deterministic Nanometer-Sized Lead Wiring by Atomic Force Microscopy Lithography

Yamagiwa

Kawabe

Mano

et al. 2007

jjap

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Field emission properties of single-walled carbon nanotubes (SWCNTs), which were prepared through alcohol catalytic chemical vapor deposition for 10 -60 s, were characterized in a diode configuration. Protrusive bundles at the top surface of samples act selectively as emission sites. The number of emission sites was controlled by emitter morphologies combined with texturing of Si substrates. SWCNTs grown on a textured Si substrate exhibited a turn-on field as low as 2.4 V/mm at a field emission current density of 1 mA/cm 2 . Uniform spatial luminescence (0.5 cm 2 ) from the rear surface of the anode was revealed for SWCNTs prepared on the textured Si substrate. Deterioration of field emission properties through repetitive measurements was reduced for the textured samples in comparison with vertically aligned SWCNTs and a random network of SWCNTs prepared on flat Si substrates. Emitter morphology resulting in improved field emission properties is a crucial factor for the fabrication of SWCNT-electron sources. Morphologically controlled SWCNTs with promising emitter performance are expected to be practical electron sources.

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“…So the real tribological surface properties of the coatings remain without testing. Atomic force microscopy (AFM) is the most suitable multifunctional technique with a high resolution both for topography and for force loading [17] to study the various surface phenomena of thin coatings, like morphology, roughness [18], adhesion, friction [19] and wear of the surface. Small normal forces (from several nanoNewtons till milliNewtons) applied during test, due to small contact area, can provide considerable Hertzian contact pressure in surface layers.…”

Section: Introductionmentioning

confidence: 99%

Friction and Wear of Cr-O-N Coatings Characterized by Atomic Force Microscopy

Кузнецова¹,

Lapitskaya²,

Чижик³

et al. 2019

Tribol. Ind.

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Cr-O-N coatings with different oxygen concentration were deposited using vacuum arc plasma fluxes on steel substrates. The coatings were investigated using atomic force microscopy under ambient temperature and humidity controlled conditions. The surface structure, friction and wear were investigated. The results indicate that coefficient of friction and friction force of Cr-O(50)-N coating consisted of Cr2O3 phase tested in a sliding regime are the lowest compared to other Cr-O-N coatings characterized by cubic CrN phase. In the ploughing regime the Cr-O(20)-N coating is characterized by the lowest coefficient of friction of and the wear rate.

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Electron field emission and surface morphology of a-C and a-C:H thin films

Cited by 22 publications

References 17 publications

Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon

Properties of CrSi2 Layers Obtained by Rapid Heat Treatment of Cr Film on Silicon

Deterministic Nanometer-Sized Lead Wiring by Atomic Force Microscopy Lithography

Friction and Wear of Cr-O-N Coatings Characterized by Atomic Force Microscopy

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