Electron energy relaxation rate: the influence of acoustic phonon spectrum anisotropy

Jasiukiewicz, Cz.; Karpus, V.

doi:10.1088/0268-1242/11/12/003

Cited by 22 publications

(10 citation statements)

References 9 publications

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“…This T 5 behavior was attributed 4 to acoustic phonon scattering in the Grüneisen-Bloch regime, with coupling via a screened piezoelectric potential. 11 These previous measurements 4 were performed at T L Յ 1.5 and T e Յ 3 K, with heating powers P Յ 10 4 eV/ s, and the transition to P 0.4 behavior occurred at a power which is an order of magnitude smaller than the convergence point.…”

Section: Resultsmentioning

confidence: 87%

“…The coefficient of the T 5 behavior is close to that obtained 4 ͑A =61 eV/s K 5 ͒ in split-gate devices for T e Ͻ 3 K, which was attributed to a screened PZ mechanism. According to the conventional theory of phonon scattering, T 5 behavior can also be obtained with an unscreened deformation potential coupling; the theoretical value 11,12 for the constant of proportionality is A th DP =76 eV/s K 5 , which is close to that measured at 4.2 K. The potentials for acoustic phonon scattering are screened when both T L and T e are much less than T s , where T s = ប s t / r s k B , r s = ͱ a B /4 k F is the Thomas-Fermi screening length, and a B is the effective Bohr radius. For our devices T s Ϸ 4 K, and as all the data presented here were measured at temperatures T Ն 4.2 K, the screening conditions are not satisfied and the unscreened behavior is expected to dominate.…”

Section: Resultsmentioning

confidence: 99%

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Energy-loss rate of a two-dimensional electron gas measured using a mesoscopic thermometer

et al. 2007

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Using a simple setup, the linear thermopower is measured in etched one-dimensional ͑1D͒ constrictions with large subband energy spacings, allowing the temperature of the two-dimensional electron gas on one side of the constriction to be determined as a function of the applied heating power. As tested by the Cutler-Mott relation, the 1D constriction acts as a reliable electron thermometer for lattice temperatures in the range T L = 4.2-13 K. The power dissipated per electron, measured as a function of electron temperature, reveals that at T L = 4.2 K the acoustic phonon scattering is dominated by T 5 behavior due to an unscreened deformation potential. At higher lattice temperatures the scattering can be described by an interpolation between the Grüneisen-Bloch and equipartition regimes.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Energy-loss rate of a two-dimensional electron gas measured using a mesoscopic thermometer

et al. 2007

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“…In our high density samples the BG regime exists at temperatures below T BG ≈ 20K, where kT BG = 2k F ·hs [75]. A theoretical evaluation of the inelastic electron-phonon scattering time in GaAs quantum wells due to screened piezoelectric (PZ) coupling yields: τ P Z ≈ 16/T 3 (ns) at temperatures of few K at zero magnetic field [76,78]. Deformation potential (DP) yields a comparable contribution to the electronphonon scattering rate at T >4K.…”

Section: High Magnetic Fieldsmentioning

confidence: 91%

Nonlinear resistance of two-dimensional electrons in crossed electric and magnetic fields

2009

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The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields B and temperatures T in GaAs quantum wells with high electron density. The data are found to be in good agreement with theory, considering the strong nonlinearity of the resistivity as result of non-uniform spectral diffusion of the 2D electrons. Inelastic processes limit the diffusion. Comparison with the theory yields the inelastic scattering time τin of the two dimensional electrons. In the temperature range T = 2 − 10K for overlapping Landau levels, the inelastic scattering rate 1/τin is found to be proportional to T 2 , indicating a dominant contribution of the electronelectron scattering to the inelastic electron relaxation. In a strong magnetic field, the nonlinear resistivity demonstrates scaling behavior, indicating a specific regime of electron heating of wellseparated Landau levels. In this regime the inelastic scattering rate is found to be proportional to T 3 , suggesting the electron-phonon scattering as the dominant mechanism of the inelastic relaxation. At low temperatures and separated Landau levels an additional regime of the inelastic electron relaxation is observed: τin ∼ T −1.26 .

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“…[8][9][10][11][12][13] In addition, deviations from Ohm's law at intermediate and high electric fields indicate that the carriers gain extra energy. [8][9][10][11][12][13] The average power gained per carrier due to an applied electric field is given by…”

Section: Introductionmentioning

confidence: 99%

“…The latter situation occurs at very low temperatures, as first studied by Kogan, 9 Greene, 10 Ridley, 11 and Jasiukiewicz and Karpus. 12 Four experimental techniques have been widely and successfully employed in investigations of electron energy relaxation. First, in heavily modulationdoped structures where a highly degenerate electron gas exists, the amplitude variation of quantum oscillations, such as the Shubnikov-de Haas (SdH) effect, with the applied field and lattice temperature can be used to determine the electron temperaturepower loss characteristic.…”

Section: Introductionmentioning

confidence: 99%

Power Loss Mechanisms in Indium-Rich InGaN Samples

Tiraş

Mutlu

Balkan

2015

Journal of Elec Materi

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Molecular beam epitaxy-grown In x Ga 1Àx N/GaN samples with indium fraction x ranging between 0.44 and 0.784 were studied by pulsed current-voltage (I-V) measurements at 1.7 K. The drift velocity, electron mobility, and electric-field-dependent power loss per electron were determined from analysis of the data. The drift velocity increased linearly while the electron mobility remained constant with increasing electric field. Power balance equations were used to obtain the power loss per electron as a function of the applied electric field in the range of 0 kV cm À1 to 230 kV cm À1 . The results showed that the power loss per electron increased in the x range of 0.44 to 0.66, then slowly decreased in the x range of 0.66 to 0.784. The results obtained for the dependence of the power loss on the electron temperature are compared with current theoretical models for the power loss in two-dimensional (2D) semiconductors, which include both piezoelectric and deformation potential scattering. For all samples, the energy relaxation of electrons is dominated by acoustic phonon emission via piezoelectric interaction.

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Electron energy relaxation rate: the influence of acoustic phonon spectrum anisotropy

Cited by 22 publications

References 9 publications

Energy-loss rate of a two-dimensional electron gas measured using a mesoscopic thermometer

Energy-loss rate of a two-dimensional electron gas measured using a mesoscopic thermometer

Nonlinear resistance of two-dimensional electrons in crossed electric and magnetic fields

Power Loss Mechanisms in Indium-Rich InGaN Samples

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