Nonlinear resistance of two-dimensional electrons in crossed electric and magnetic fields

Zhang, Jing Qiao; Vitkalov, Sergey; Быков, А. А.

doi:10.1103/physrevb.80.045310

Cited by 44 publications

(42 citation statements)

References 88 publications

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“…Therefore, the analysis of the HIRO amplitude using Eq. (1) can yield information on both sharp and smooth disorder components in a 2DES under study.In the regime of weak electric fields, the differential resistance acquires a negative quantum correction which scales with j 2 , as has been observed in GaAs heterostructures [3,4,6,8,[13][14][15][16][17][18][19]. In contrast to Eq.…”

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confidence: 65%

“…In contrast, the second (inelastic) term in Eq. (3), given by τ in /τ ∼ E F /τ (k B T ) 2 (E F is the Fermi energy, τ in is the inelastic relaxation time), can be significantly larger than unity, especially in high density and low mobility 2DESs [8,[13][14][15][16][17][18][19]. In such systems, nonlinear transport at small j offers a convenient way to obtain τ in and thus access the strength of electron-electron interactions in the 2DES under study.…”

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confidence: 99%

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Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

et al. 2017

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We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates.Nonlinear magnetotransport in high Landau levels of twodimensional electron systems (2DESs) offers a unique approach to obtain information on both electron-impurity and electron-electron scattering. For example, at high direct currents the differential resistance exhibits Hall field-induced resistance oscillations (HIRO) [1][2][3][4][5][6][7][8][9][10][11] which originate from electron (or hole [10]) backscattering off impurities leading to transitions between Landau levels. Since such transitions are accompanied by a displacement of the electron guiding center by a cyclotron diameter 2R c , applied current density j translates to an energy scale eρ H j(2R c ), where ρ H is the Hall resistivity. HIRO then result from the commensurability between this energy and the inter-Landau level spacing ω c , where ω c is the cyclotron frequency of a charge carrier. In overlapping Landau levels, the corresponding correction to the differential resistance r is given by [12] where ǫ j = eρ H j(2R c )/ ω c , R 0 is the low-temperature, linear-response resistance at zero magnetic field (B = 0), τ is the disorder-limited transport scattering time, τ π is the backscattering time, λ = exp(−π/ω c τ q ) is the Dingle factor, and τ q is the quantum lifetime. The disorder in a 2DES can often be conveniently separated into a short-range (e.g., background impurities) and a longrange (e.g., remote ionized donors) component, characterized by "sharp" and "smooth" scattering rates (τ −1 sh and τ −1 sm ), respectively. When τ ≫ τ q , as in a conventional high-mobility modulation-doped 2DES, τ sh ≈ τ π and τ sm ≈ τ q . Therefore, the analysis of the HIRO amplitude using Eq. (1) can yield information on both sharp and smooth disorder components in a 2DES under study.In the regime of weak electric fields, the differential resistance acquires a negative quantum correction which scales with j 2 , as has been observed in GaAs heterostructures [3,4,6,8,[13][14][15][16][17][18][19]. In contrast to Eq. (1), this current-induced correction originates both from the low ǫ j counterpart of Eq. (1) [12] (displacement mechanism) and from the oscillatory modification of the energy distribution function (inelastic mechanism) [20]. More specifically, in overlapping Landau levels, δr can be written as [12] whereHere, τ −1 ⋆ entering the first (displacement) term can be expressed as τ −1, where τ −1 n represents n-th angular harmonic of the rate of scattering on angle θ, τ −1. This displacement term can never exceed 9/16 (sharp-disorder limit). In contra...

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Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

et al. 2017

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“…In lower mobility and higher density 2DES, the inelastic contribu- tion becomes even stronger and the displacement contribution can be safely ignored, at least in the overlapping Landau level regime. 47,48 The ratio τ in /τ , which determines the inelastic contribution, is bounded by 1.69 ≤ τ in /τ ≤ 2.16, from which we obtain 0.57 ns ≤ τ in ≤ 0.73 ns. This result agrees well with the theoretical estimate, τ in ≈ 0.56 ns, obtained from /τ in ≃ k 2 B T 2 /E F .…”

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Nonlinear response in overlapping and separated Landau levels of GaAs quantum wells

et al. 2012

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We have studied magnetotransport properties of a high-mobility two-dimensional electron system subject to weak electric fields. At low magnetic field B, the differential resistivity acquires a correction δr ∝ −λ 2 j 2 /B 2 , where λ is the Dingle factor and j is the current density, in agreement with theoretical predictions. At higher magnetic fields, however, δr becomes B-independent, δr ∝ −j 2 . While the observed change in behavior can be attributed to a crossover from overlapping to separated Landau levels, full understanding of this behavior remains a subject of future theories.

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“…At this condition the e − e scattering is ineffective (see Fig.7 in Ref. [2]), since the scattering conserves the total electron energy.…”

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“…This effect, called quantal heating, does not exist in classical electron systems. The most essential property of quantal heating is the conservation of the total number of quantum states participating in the electron transport and, thus, the conservation of the overall broadening of the electron distribution 2,3 . In contrast to classical Joule heating, quantal heating leads to outstanding nonlinear transport properties of highly mobile 2D electrons, driving them into exotic nonlinear states in which voltage (current) does not depend on current 4 (voltage) 5 .…”

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confidence: 99%