Physica Status Solidi (b)
 1986
DOI: 10.1002/pssb.2221370120
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Electron Energy Levels in GaAs/Ga1−xAlxAs Heterojunctions

Mehmet Tomak
1
,
V. K. Godwin
2

Abstract: A theoretical study of the subband structure and impurity related levels in GaAs/Ga1−xAlxAs heterojunction is given.

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