A closed-form expression to analyze electronic properties in delta-doped heterostructures

Chen, Xiying; Nabet, Bahram

doi:10.1016/j.sse.2004.04.011

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…The δ-doping technique allows to obtain an extremely sharp doping profile and a high-density-doped layer, which is of great interest [5,[25][26][27][28][29]. The potential of this system is formed by a metal-semiconductor contact (Schottky barrier), followed by the n-type δ-doped quantumwell system and another of the p-type.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Oubram¹,

Gaggero‐Sager²,

Ouadou³

2011

PIER

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Abstract-According to the scaling-down theory, the ALD-FET (Atomic Layer Doping-Field Effect Transistor) structure has attracted a lot of attention in view of its uses for developing devices with very short channels and for achieving very-high-speed operation. Therefore, there is a strong need to obtain an accurate understanding of carrier transport (mobility and conductivity) in such devices. In this work, we report the carrier transport based on the electronic structure of devices. Our results include analytical expressions of both mobility and conductivity. Our analytical expressions for the mobility and conductivity allow us to analyze transport in ALD-FET. We report regions where this device operates in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of the system. The width of the Ohmic region as well as the NDR (Negative Differential Resistance) properties of the system are also characterized.

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Section: Theoretical Backgroundmentioning

confidence: 99%

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Oubram¹,

Gaggero‐Sager²,

Ouadou³

2011

PIER

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“…The δ-doping technique allows one to obtain an extremely sharp doping profile and a high-density-doped layer [26][27][28][29], and it is of great interest [30][31][32].…”

Section: Theoretical Backgroundmentioning

confidence: 99%

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Oubram¹,

Gaggero‐Sager²,

Bassam³

et al. 2010

PIER

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Abstract-The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze transport in this device. We find the relative mobility as a linear and increasing function in different modes; also, we find transconductance as an almost flat function in all the evaluated interval. Finally, we analyze the differential capacitance and resistivity, and we report regions where this device is operating in digital and analogue mode. These regions are delimited in terms of intrinsic and extrinsic parameters of this device in symmetrical mode.

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Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET: An Analytical Approach

Patnaik

Jaiswal

Sharma

2022

IEEE Trans. Electron Devices

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A closed-form expression to analyze electronic properties in delta-doped heterostructures

Cited by 3 publications

References 27 publications

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET: An Analytical Approach

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A closed-form expression to analyze electronic properties in delta-doped heterostructures

Cited by 3 publications

References 27 publications

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Transport and Electronic Properties of Two Dimensional Electron Gas in Delta-Migfet in Gaas

Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al x Ga1−x )2O3/Ga2O3 HFET: An Analytical Approach

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Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET: An Analytical Approach