Electron-Electron Interaction in the Magnetoresistance of Graphene

Jobst, Johannes; Waldmann, Daniel; Gornyi, I. V.; Mirlin, A. D.; Weber, Heiko B.

doi:10.1103/physrevlett.108.106601

Cited by 87 publications

(119 citation statements)

References 39 publications

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“…As mentioned above, Ludwig et al [28] predict an effect of electron-electron interaction on the current dependence of mesoscopic conductance fluctuations via nonequilibrium conditions. Since a small device size sets a low-energy cutoff to electron-electron interaction [47], the quadratic current dependence observed by Rahman et al [9] at j ≈ 0.14 A/m could be a result of their small device size. However, in our large-area devices, electron-electron interaction is present at zero and intermediate magnetic flux densities (see Supplemental Material [42]) and might be related to the heating of the electron system in our case.…”

Section: B Temperature Dependence Of 1/ F Noisementioning

confidence: 99%

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

et al. 2016

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We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current, and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the Kubakaddi theory [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations, a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and quantum Hall breakdown sets in.

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Section: B Temperature Dependence Of 1/ F Noisementioning

confidence: 99%

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

et al. 2016

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“…At intermediate magnetic fields, between the realms of weak localization and quantum Hall effect, recent measurements highlighted the role of the electron-electron interaction (EEI) on the magnetoconductivity. [6][7][8][9] A complete theory of EEI in graphene is still missing, but it is possible to use the knowledge accumulated in more conventional twodimensional systems like thin metal films or semiconductor heterostructures, for which EEI has been theoretically and experimentally studied over more than three decades [10][11][12][13][14][15]. The quantum correction due to the EEI differs at low and high temperatures.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, in the ballistic regime, EEI depends on the impurity type [23] and can give indications on the microscopic nature of disorder in graphene. Up to now, most of the EEI measurements in graphene have focused on the diffusive regime [6][7][8][9]. The systematic study of EEI correction in this material, from the diffusive to the ballistic regime, associated with quantitative and qualitative comparisons with models of disorder, is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance of disordered graphene: From low to high temperatures

Jabakhanji

Kazazis²,

Desrat

et al. 2014

Phys. Rev. B

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We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T = 1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120 − 240 K. The maximum is observed at intermediate magnetic fields (B = 2 − 6 T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low field magnetoresistance increases continuously with T and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long and short range disorder in these samples.

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“…In the case of vacancies, screening of the σ moment is expected only for non planar geometries and, if any, is not compatible with Curielaw behavior observed in Ref.s 7,27. Metallic Kondo screening of spin-1 2 impurities has been used to explain transport measurements in irradiated graphene at different doping levels 10 , including charge neutrality, but the interpretation has been questioned 46,47 , and the observed logarithmic increase of resistivity at low temperatures related instead to electron-electron interactions in the disordered system 48,49 .…”

Section: B Wavefunction Calculationsmentioning

confidence: 99%

Spin coupling around a carbon atom vacancy in graphene

Casartelli

Casolo²,

Tantardini³

et al. 2013

Phys. Rev. B

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We investigate the details of the electronic structure in the neighborhoods of a carbon atom vacancy in graphene by employing magnetization-constrained density-functional theory on periodic slabs, and spin-exact, multi-reference, second-order perturbation theory on a finite cluster. The picture that emerges is that of two local magnetic moments (one π-like and one σ-like) decoupled from the π band and coupled to each other. We find that the ground state is a triplet with a planar equilibrium geometry where an apical C atom opposes a pentagonal ring. This state lies ∼0.2 eV lower in energy than the open-shell singlet with one spin flipped, which is a bistable system with two equivalent equilibrium lattice configurations (for the apical C atom above or below the lattice plane) and a barrier ∼0.1 eV high separating them. Accordingly, a bare carbon-atom vacancy is predicted to be a spin-one paramagnetic species, but spin-half paramagnetism can be accommodated if binding to foreign species, ripples, coupling to a substrate, or doping are taken into account.

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Electron-Electron Interaction in the Magnetoresistance of Graphene

Cited by 87 publications

References 39 publications

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Magnetoresistance of disordered graphene: From low to high temperatures

Spin coupling around a carbon atom vacancy in graphene

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