1988
DOI: 10.1016/0304-3991(88)90127-1
|View full text |Cite
|
Sign up to set email alerts
|

Electron diffraction studies of strain in epitaxial bicrystals and multilayers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

3
15
0

Year Published

1989
1989
2011
2011

Publication Types

Select...
4
4

Relationship

1
7

Authors

Journals

citations
Cited by 53 publications
(18 citation statements)
references
References 6 publications
3
15
0
Order By: Relevance
“…This expression is coincident with the one previously reported by Cherns et al [8] In Figure 2 is plotted the parameter f lq versus k for f =0.01. It is evident that k has a negligible influence on f /7î: for instance in the case of te = ts =100 nm, f /1J differs from unity by just 0.005.…”
Section: ) Is Given Bysupporting
confidence: 89%
“…This expression is coincident with the one previously reported by Cherns et al [8] In Figure 2 is plotted the parameter f lq versus k for f =0.01. It is evident that k has a negligible influence on f /7î: for instance in the case of te = ts =100 nm, f /1J differs from unity by just 0.005.…”
Section: ) Is Given Bysupporting
confidence: 89%
“…At the other extreme, Rutherford backscattering is applicable to nanometer films (Hamdi et al, 1985). Recently, transmission electron microscopy and convergent-beam electron diffraction were used to measure misfit strains in NiSi2 grown onto (001)Si and (lll)Si (Cherns, Kelly & Preston, 1988). The results are promising, but buckling of the stressed film after thinning the substrate makes this potentially very accurate method difficult to apply in practice.…”
Section: Introductionmentioning
confidence: 93%
“…Experimentally it is characterized by a variety of techniques, including X-ray diffraction (Bartels, 1983;Bartels & Nijman, 1978;Bassignana & Tan, 1989;Bensoussan, Malgrange & Sauvage-Simkin, 1987;Chu, Macrander, Strege & Johnston, 1985;Fewster, 1982;Hornstra & Bartels, 1978;Ishida, Matsui, Kamejima & Sakuma, 1975;Matsui, Onabe, Kamejima & Hayashi, 1979;Olsen, Nuese & Smith, 1978;Olsen & Smith, 1975), transmission electron microscopy (Cherns, Kelly & Preston, 1988), backscattering spectrometry with ion channeling (Hamdi, Speriosu, Tandon & Nicolet, 1985) and by other spectrometric techniques (Lee & Laidig, 1984). The most accurate results are given by the X-ray techniques, mainly double-and triple-crystal diffractometry.…”
Section: Introductionmentioning
confidence: 99%
“…Equation (18) has been used to calculate the stress level due to "coherent" precipitates and the results are given in italics in Table 2.…”
Section: Stresses At Contactmentioning
confidence: 99%
“…They can be due, e.g., to dislocation networks building up the boundary or to single dislocations which have interacted with the boundary. In [18][19][20], e.g., misfit strains in multilayers have been dealt with. An alternative source for the stress could be misfit particles in the boundary.…”
Section: Misfit Strains Strains Due To Dislocation Network and Dismentioning
confidence: 99%