Influence of Experimental Parameters on the Determination of Tetragonal Distortion in Heterostructures by LACBED

Armigliato, A.; Balboni, R.; Corticelli, Franco; Frabboni, Stefano

doi:10.1051/mmm:1995135

Cited by 9 publications

(3 citation statements)

References 7 publications

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“…Two different kinds of MD have been experimentally evidenced by high-resolution electron microscopy (HREM) analyses [10] on the two nominal orientations Si (111) and Si(001): a 90 • Shockley partial (a/6) 112 dislocation and an undissociated (a/2) 110 dislocation respectively. Let us first compare the experimental (h exp -) and theoretical (h cr -) values on the two orientations (001) and (111) in the case of Si 0.7 Ge 0.3 (m = 1.2%) grown at 600 • C. The calculated values are h cr ∼ 8 nm and ∼12 nm on (001) and ( 111) respectively while the experimental values are found to be much larger: h exp 50 nm) [8], and approximately the same on the two orientations. These discrepancies between theoretical predictions and experimental results are explained by the kinetic barrier to dislocation nucleation: in the MB model, MDs nucleate from the propagation of threading dislocations already present in the substrate while in the experiments they nucleate in the epitaxial film on point defects.…”

Section: Plastic Relaxationmentioning

confidence: 93%

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SiGe nanostructures: new insights into growth processes

Berbézier

Ronda

Portavoce

2002

J. Phys.: Condens. Matter

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During the last decade, Si/Si 1−x Ge x heterostructures have emerged as a viable system for use in CMOS technology with the recent industrial production of heterojunction bipolar transistor-based integrated circuits. However, many key problems have to be solved to further expand the capabilities of this system to other more attractive devices. This paper gives a comprehensive review of the progress achieved during the last few years in the understanding of some fundamental growth mechanisms. The discrepancies between classical theories (in the framework of continuum elasticity) and experimental results are also specially addressed. In particular, the major role played by kinetics in the morphological evolution of layers is particularly emphasized. Starting from the unexpected differences in Si 1−x Ge x morphological evolution when deposited on (001) and on (111), our review then focuses on: (1) the strain control and adjustment (from fully strained to fully relaxed 2D and 3D nanostructures)in particular, some original examples of local CBED stress measurements are presented; (2) the nucleation, growth, and self-assembly processes, using self-patterned template layers and surfactant-mediated growth; (3) the doping processes (using B for type p and Sb for type n) and the limitations induced by dopant redistribution during and after growth due to diffusion, segregation, and desorption. The final section will briefly address some relevant optical properties of Si 1−x Ge x strained layers using special growth processes.(Some figures in this article are in colour only in the electronic version) (HBT). The main reason is that it presents a minimum additional cost to CMOS and a very simple design with a narrow Si 1−x Ge x base layer inserted into a bipolar BiCMOS fabrication process. However, even if this technology is quite mature, the device characteristics obtained in production lines are much less good than those demonstrated for research devices. This result has not been explained so far, but the high thermal budget, used in present CMOS production, is assumed to have the major detrimental effect. Indeed, it causes strain relaxation (by dislocation nucleation and also by interdiffusion of Si/Si 1−x Ge x ), dopant diffusion, interface roughening, and Ge clustering. All these phenomena are well known to degrade the electrical properties of HBTs.Recent research developments also focus on other attractive devices such as the p-type Si 1−x Ge x MOSFET, since p channels represent so far the major limiting factor in CMOS performance. Indeed, the mobility of Si 1−x Ge x p MOSFET is only 20% larger than those of conventional transistors. This is attributed to parallel conduction due to the small band offset of Si 1−x Ge x channels that contain low Ge content. Further improvements would then rely on an increase of the Ge content to increase the band offset. This is expected to give stronger transfer and confinement of the carriers, preventing parallel conduction from taking place. However, this faces serious problems, since a...

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Section: Plastic Relaxationmentioning

confidence: 93%

“…The tetragonal distortion can be observed as a splitting of Bragg contours relative to crystallographic planes inclined at an angle with respect to the substrate plane. The tetragonal distortion (ε ⊥ ) may then be deduced from the relative rotation (θ r ) of the planes via [8]…”

Section: Highly Strained Structuresmentioning

confidence: 99%

SiGe nanostructures: new insights into growth processes

Berbézier

Ronda

Portavoce

2002

J. Phys.: Condens. Matter

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“…Therefore, it is difficult to measure the strain field of a recent device by a conventional method. [9][10][11][12][13] Recently, it is believed that the origin of split HOLZ lines is the bending of crystals in regions close to interfaces, 5) or crystalline inhomogeneities in the stress layer. 14) Discussion in almost all previous reports on these effects has been based on comparison with a dynamical simulation.…”

mentioning

confidence: 99%

Distortion Measurement of Multi-Finger Transistor Using Split Higher-Order Laue Zone Lines Analysis

Uesugi¹,

Yamazaki

Kuramochi

et al. 2008

jjap

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A distortion measurement in a region close to the interface between different materials in LSI is performed using a convergent beam electron diffraction (CBED) pattern. Split higher-order Laue zone (HOLZ) lines emerge in the CBED pattern so that a stressing region is observed close to the interface. The calculation method of the split HOLZ lines based on kinematical approximation with the sample's deformation model well reflects the experimental results. As a result of split HOLZ line analysis using the present method, it is found that there is distortion depending on the external form of a multi-finger transistor.

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TEM for Characterization of Semiconductor Nanomaterials

Carlino

2013

Transmission Electron Microscopy Characterization of Nanomaterials

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Influence of Experimental Parameters on the Determination of Tetragonal Distortion in Heterostructures by LACBED

Cited by 9 publications

References 7 publications

SiGe nanostructures: new insights into growth processes

SiGe nanostructures: new insights into growth processes

Distortion Measurement of Multi-Finger Transistor Using Split Higher-Order Laue Zone Lines Analysis

TEM for Characterization of Semiconductor Nanomaterials

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