Electron cyclotron resonance oxygen plasma etching of diamond

Bernard, M.; Deneuville, A.; Ortéga, L.; Ayadi, Khaled; Muret, Pierre

doi:10.1016/j.diamond.2003.10.011

Cited by 27 publications

(15 citation statements)

References 10 publications

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“…Some of these "as-grown" samples have been either polished by "scaife" polishing or etched by pure oxygen ECR plasma under optimised conditions [15] during 1 hour, an operation which removed from 3 to 4 µm of the diamond layer. The detailed description of the ECR equipment has been already done elsewhere [19,20]. After growth, the surface of one of the samples has been bevelled by mechanical polishing with an angle of 5 degrees.…”

Section: Methodsmentioning

confidence: 99%

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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Several 65 µm thick epitaxial diamond films prepared on (100) Ib substrates by high power, pulsed microwave plasma assisted chemical vapour deposition (HP-PMPCVD) are studied as a function of surface treatments by cathodoluminescence (CL) and photoluminescence (PL) spectroscopies. They are either as-grown, or polished, or etched by a microwave oxygen plasma, or after applying subsequently the two last processes. In CL spectra, bands due to defects occur at 2.3 eV, 3.07 eV, 3.6 eV and 4.7 eV, the last one being specific of polished surfaces, with nearly no contrast in the luminescence image, contrary to other CL images. A fundamental result consists in demonstrating that the defects induced by polishing can be removed by oxygen plasma etching. Additionally, in order to assess how luminescence spectra originate from a peculiar depth or not, a bevelled sample is studied. PL spectra are acquired on the sample side while CL spectra are measured at several points on the bevel top side till to the Ib substrate. Comparison of the two sets of result show that the H3 signal originates from the Ib substrate even if it is present in the CL spectra of the film. An analysis of the change in the intensity of the TO free exciton line, defect bands and H3 signal, along decreasing photon energies, as a function of the thickness of the remaining HP-PMPCVD film, is performed with the help of a model taking the diffusion of the unrecombined excitonic pairs and the re-excited photoluminescence into account. CL images recorded at specific wavelengths, which do not show inverted contrast, are also assessed. From these data, the exciton diffusion length is evaluated to 11 µm in the major part of the epitaxial layer except for the first 20 µm close to the Ib substrate where it decreases down to 2 µm. This study sheds light on the interpretation of luminescence spectra excited by an electron beam in undoped diamond layers. Defects bands due to damages induced by polishing and etching processes are also documented.

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Section: Methodsmentioning

confidence: 99%

Defect analysis and excitons diffusion in undoped homoepitaxial diamond films after polishing and oxygen plasma etching

Volpe

Muret

Omnès

et al. 2009

Diamond and Related Materials

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“…It is found that numerous very deep pits appear within the surfaces and the boundaries of the crystals. The appearance of the deep pits can be attributed to the higher etching rate of dislocations with positive oxygen ions accelerated by the sheath voltage drop between the plasma and the diamond film [7] . By lowering the DC power to 780 V×60 mA, the intensity of plasma etching decreased and the surface was weakly etched.…”

Section: Plasma-etching Enhanced Mechanical Polishingmentioning

confidence: 99%

Plasma-Etching Enhanced Mechanical Polishing for CVD Diamond Films

Zheng

Zhen-hui

et al. 2008

Plasma Sci. Technol.

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Chemically vapor deposited diamond films were etched at different parameters using oxygen plasma produced by a DC (direct current) glow discharge and then polished by a modified mechanical polishing device. Scanning electron microscope, atomic force microscope and Raman spectrometer were used to evaluate the surface states of diamond films before and after polishing. It was found that a moderate plasma etching would produce a lot of etch pits and amorphous carbon on the top surface of diamond film. As a result, the quality and the efficiency of mechanical polishing have been enhanced remarkably.

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“…The boron-doped film has been deposited on an E6 CVD (100) To study the buried part of the epilayer, a 500 nm deep ECR (microwave electron cyclotron resonance plasma of oxygen) etching has been performed on half of the sample surface. A detailed description of the ECR equipment has been already given elsewhere [5,6]. The layer was etched at room temperature for 8 min under a RF self-bias voltage of 27.5 V, a microwave power of 1600 W, and an oxygen pressure of 2.35 mTorr.…”

Section: Methodsmentioning

confidence: 99%