Electron current through metal-insulator-metal sandwiches

Tantraporn, W.

doi:10.1016/0038-1101(64)90123-6

Cited by 34 publications

(4 citation statements)

References 11 publications

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“…The general equations (13) and (24) permit to calculate the current density with a very goodaccuracy. Theexpressions (18), (20)) and (21) in Section5 apply for arbitrary barriers, the magnitudes b, C, f , U,, E , and T, being dependent on the barrier shape.…”

Section: Resultsmentioning

confidence: 99%

“…Recently this theory was further developed by Stratton [lo] and Simmons [ll] who also treated the temperature dependence of the tunneling current [12] -scc also Tantraporn [13] and Hrach [14]. The difference of the effective electron mass in the insulator from that of the free electron is first taken into account by Stratton [lo].…”

Section: Similar Calculations Of Holm and Kirsteinmentioning

confidence: 99%

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Injected Electron Currents Through Insulators

Christov

1969

Physica Status Solidi (b)

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The previously presented unified theory of field and thermionic emission is extended to electron emission into dielectrics, including thin films between two metal electrodes. The current equations are derived under the assumption of a parabolic energy-momentum dependence and convenient barrier shape approximations for various thicknesses of the insulating layer, but the general method is used in the case of any arbitrary barrier shape. Both cases of equal and unequal effective electron masses in the insulator and the metals are considered. The current expressions obtained are applicable to the whole range of fields and temperatures between the limits of thermionic and field emission.Die friiher vorgelegte einheitliche Theorie der Feld-und Thermoemission wird auf die Elektronenemission in Dielektrika erweitert, einschliellich dunner Schichten zwischen zwei metallischen Elektroden. Die Stromgleichungen werden unter der Annahme einer parabolischen Energie-Impuls-AbhLngigkeit und geeigneter Niiherungen fiir die Barrierenform fur verschiedene Dicken der isolierenden Schicht abgeleitet, jedoch wird die allgemeine Methode fur den Fall einer beliebigen Barrierenform benutzt. Es werden sowohl der Fall gleicher wie ungleicher effektiver Elektronenmassen im Isolator und Metal1 berucksichtigt. Die erhaltenen Stromgleichungen sind fur den gesamten Feld-und Temperaturbereich zwischen den Grenzen der thermischen Emission und der Feldemission anwendbar.

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Section: Resultsmentioning

confidence: 99%

Section: Similar Calculations Of Holm and Kirsteinmentioning

confidence: 99%

Injected Electron Currents Through Insulators

Christov

1969

Physica Status Solidi (b)

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“…Our work draws from the literature developed for metal-insulator-metal (MIM) structures [23][24][25][26][27][28][29][30][31][32][33][34][35][36]. A quantum mechanical model is applied that describes tunneling with an applied timedependent field.…”

Section: Introductionmentioning

confidence: 99%

Quantum conductivity for metal–insulator–metal nanostructures

et al. 2014

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We present a methodology based on quantum mechanics for assigning quantum conductivity when an ac field is applied across a variable gap between two plasmonic nanoparticles with an insulator sandwiched between them. The quantum tunneling effect is portrayed by a set of quantum conductivity coefficients describing the linear ac conductivity responding at the frequency of the applied field and nonlinear coefficients that modulate the field amplitude at the fundamental frequency and its harmonics. The quantum conductivity, determined with no fit parameters, has both frequency and gap dependence that can be applied to determine the nonlinear quantum effects of strong applied electromagnetic fields even when the system is composed of dissimilar metal nanostructures. Our methodology compares well to results on quantum tunneling effects reported in the literature and it is simple to extend it to a number of systems with different metals and different insulators between them. z dc d z z d E d dc eV eV J J J J J J eV eV J J J J e eV eV J J eV J ω ϕ eV J e eV eV e J J eV eV eV eV e J J J J dc d dc J J J J eV J J J J eV J eV J J J J eV J eV e J eV J eV J eV J eV J dc d dc J J J J J eV J eV J J J J eV J eV J J J J eV J eV e J eV J eV J eV J ω ϕ dc d dc ed J eV J eV J eV ed J eV J eV ed J eV J eV J eV J eV ed J eV J e V J eV J eV J eV ed J eV J eV J eV J eV J eV J eV

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“…The example of thin A1,0, films shows that the determination of the effective electron mass in thin insulating films is not an easy problem. The values given in the literature vary from mlm, = 0.01 [3] to m/mo = 1.78 [4]. The purpose of this paper is to discuss the possibility of determining the factor b and the quotient m/mo, substituting 8, or Ss for the unknown 8,.…”

Section: Introductionmentioning

confidence: 99%

A Method of Measuring Effective Electron Mass in Thin Insulating Films

Antula

1967

Physica Status Solidi (b)

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d method is proposed for calculating the electron effective mass in thin insulating films (less than 100 tf) from the tunnel-and Schottky currents. I n this method the slope of the Schottky characteristic provides the effective film thickness, and the slope of the tunnel characteric leads to the electron effective mass. It is shown that, for uneven films, this method may provide better results than the calculation using the capacitance film thickness. The method is used to calculate the electron effective mass in a thin Ta,O, film.Eine Methode zur Berechnung von effektiven Elektronenmassen in dannen Isolationsschichten (< 100 8 ) aus Messungen von Tunnelund Schottky-Stromen wird vorgeschla-

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Electron current through metal-insulator-metal sandwiches

Cited by 34 publications

References 11 publications

Injected Electron Currents Through Insulators

Injected Electron Currents Through Insulators

Quantum conductivity for metal–insulator–metal nanostructures

A Method of Measuring Effective Electron Mass in Thin Insulating Films

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