Measurements are made of the current density as a function of the field and temperature for AlAl2O3Al junctions in the three emission regions: thermionic, T–F, and the extended field emission region under conditions where the Schottky image potential well describes the barrier at the metal‐insulator boundary. Al2O3 layers obtained by electrochemical anodic oxidation with thicknesses from 50 to 150 Å were used. The dielectric constant (D = 8.9 ± 0.1) was determined from independent measurements. The effective electron mass and the metal‐insulator work function were determined in the region of thermionic emission. A fair agreement between the experimental data and the equations of the general theory of electron emission from metals in dielectrics is obtained in the whole range of field and temperature variation.