Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge

• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. Abstract-We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electronconcentration dependent absorption of highly-doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gbit/s and a power consumption of 53 fJ/bit. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

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“…1). Experimental data from [7] shows reasonable agreement with this model. The rise of absorption beyond 1·10…”

supporting

confidence: 73%

“…The effect was first measured and explained by Hahn in 1995 [7]. The change in absorption is due to a combination of band filling and band-gap shrinkage in InGaAs, which causes electron-densitydependent absorption.…”

Section: Introductionmentioning

confidence: 99%

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Engelen

Shen

Roelkens

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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“…As the doping concentration increases, the absorption coefficient decreases, especially when the wavelength of the incident light is close to the energy gap [24]. In the simulation, the absorption coefficient in the p-region is 5% of that in the i-region [24]. For the harmonic analysis, G 0 (r, t) is a time harmonic function.…”

Section: B Basic Drift-diffusion Modelmentioning

confidence: 97%

Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector

Marks

Menyuk

et al. 2014

J. Lightwave Technol.

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Abstract-Nonlinearity in p-i-n photodetectors leads to power generation at harmonics of the input frequency, limiting the performance of RF-photonic systems. We use one-dimensional and two-dimensional simulations of the drift-diffusion equations to determine the physical origin of the saturation in a simple heterojunction p-i-n photodetector at room temperature. Incomplete ionization, external loading, impact ionization, and the Franz-Keldysh effect are all included in the model. Impact ionization is the main source of nonlinearity at large reverse bias (>10 V in the device that we simulated). The electron and hole current contributions to the second harmonic power were calculated. We find that impact ionization has a greater effect on the electrons than it does on the holes. We also find that the hole velocity saturates slowly with increasing reverse bias, and the hole current makes a large contribution to the harmonic power at 10 V. This result implies that decreasing the hole injection will decrease the harmonic power.Index Terms-2D simulation, impact ionization, nonlinearity, p-i-n photodetector.

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“…The BGN is consisting of two parts. The first part appears due to the electron-impurity interaction and can be described (in parabolic band approximation) by the following relation [34,35]:…”

Section: Optical-electronic Propertiesmentioning

confidence: 99%