2018
DOI: 10.1016/j.nanoen.2018.05.024
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Electron blocking layer-based interfacial design for highly-enhanced triboelectric nanogenerators

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Cited by 114 publications
(66 citation statements)
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“…Figure 3 d shows the corresponding results for the triboelectric potential distributions of pristine TENGs and TiO 2−x NPs-embedded TENG, respectively. The details of the COMSOL Multiphysics simulation parameters and equations are provided in our previous study, Reference [ 16 ]. As a result, the COMSOL simulations showed that the 5% TiO 2−x NPs-embedded TENG can exhibit higher performance than the pristine TENG.…”
Section: Resultsmentioning
confidence: 99%
“…Figure 3 d shows the corresponding results for the triboelectric potential distributions of pristine TENGs and TiO 2−x NPs-embedded TENG, respectively. The details of the COMSOL Multiphysics simulation parameters and equations are provided in our previous study, Reference [ 16 ]. As a result, the COMSOL simulations showed that the 5% TiO 2−x NPs-embedded TENG can exhibit higher performance than the pristine TENG.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the variation of the instantaneous power densities of the IPS10‐based TENG device corresponding to the change of external loads under different applied forces was investigated (see Figure S10 in the Supporting Information). Beyond this, we conducted a comparative study of the density of the power generated by the TENG device developed in this study with other PDMS‐based TENGs from selected previous reports (Figure b) 5b,7e,16b,21. It is obviously demonstrated that the newly developed TENG device possesses much higher power density than those of all other selected PDMS‐based TENGs for a wide range of applied forces.…”
Section: Resultsmentioning
confidence: 82%
“…Various metal oxide thin films have been reported to block the charge combination due to their high permittivity, a large number of oxygen vacancies, and the high interface density of states. Adding a titanium oxide (TiO X ) layer maintained the high surface charge density by suppressing the charge combination; thus, a significant enhancement in TENG performance was obtained 66 . A TENG with an indium zinc oxide (IZO) interlayer was also reported to provide a large interface density of states and to function as a charge reservoir 67 .…”
Section: Charge-trapping Layermentioning
confidence: 99%