Electron beam recording in SiO<sub>2</sub>with direct read-out using the electron beam induced current at a p-n junction

Varker, C. J.; Juleff, E. M.

doi:10.1109/proc.1967.5671

Cited by 4 publications

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“…The similar phenomena have been observed in the following years [36,37]. A few years later, in 1967, Simmons et al [38] and Varker et al [39] had indicated the possible application of RS in memory technology. Over time, several materials and systems have been studied to perform RS and to understand the physics behind the switching.…”

Section: Journey Of Resistive Switching Memory and Evolution Of Struc...supporting

confidence: 73%

Challenges and Applications of Emerging Nonvolatile Memory Devices

2020

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Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Among several alternatives, phase change memory, spin-transfer torque random access memory, and resistive random-access memory (RRAM) are major emerging technologies. This review explains all varieties of prototype and eNVM devices, their challenges, and their applications. A performance comparison shows that it is difficult to achieve a “universal memory” which can fulfill all requirements. Compared to other emerging alternative devices, RRAM technology is showing promise with its highly scalable, cost-effective, simple two-terminal structure, low-voltage and ultra-low-power operation capabilities, high-speed switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications. More precisely, this review explains the journey and device engineering of RRAM with various architectures. The challenges in different prototype and eNVM devices is disused with the conventional and novel application areas. Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security. In the post-CMOS era, a more efficient, intelligent, and secure computing system is possible to design with the help of eNVM devices.

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Section: Journey Of Resistive Switching Memory and Evolution Of Struc...supporting

confidence: 73%

Challenges and Applications of Emerging Nonvolatile Memory Devices

2020

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“…The idea has not been exploited, however, largely owing to the drawbacks listed in 5 6.1. Varker and Juleff (1967) described a read-only memory written in SiO, films by means of a finely focused scanning electron beam. The target consisted of a 4000 A layer of SiO, grown on n+ silicon on a p-type diffused epitaxial substrate.…”

Section: Memory Arraysmentioning

confidence: 99%

Electrical phenomena in amorphous oxide films

1970

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Charge collection scanning electron microscopy

Leamy¹

1982

Journal of Applied Physics

769

320

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A novel apparatus for in situ compression of submicron structures and particles in a high resolution SEM Rev. Sci. Instrum. 83, 095105 (2012) Foucault imaging by using non-dedicated transmission electron microscope Appl. Phys. Lett. 101, 093101 (2012) New Products Rev. Sci. Instrum. 83, 079501 (2012) Towards secondary ion mass spectrometry on the helium ion microscope: An experimental and simulation based feasibility study with He+ and Ne+ bombardment This review encompasses the application of the scanning electron microscope to the study and characterization of semiconductor materials and devices by the Electron Beam Induced Conductivity (EBIC) method. In this technique, the charge carriers generated by the electron beam of the microscope are collected by an electric field within the material and sensed as a current in an external circuit. When employed as the video signal of the SEM, this collected current image reveals inhomogeneities in the electrical properties of the material. The technique has been used to determine carrier lifetime, diffusion length, defect energy levels, and surface recombination velocities. Charge collection images reveal the location of p-n junctions, recombination sites such as dislocations and precipitates, and the presence of doping level inhomogeneities. Both the theoretical foundation and the practical aspects of these effects are discussed in a tutorial fashion in this review. PACS numbers: 07.80. + x, 61.16.Di, 72.20. -i GLOSSARY OF SYMBOLS C = ill II = image contrast. {j = SrlL = recombination velocity -;-diffusion velocity. D, De' Dh = Diffusion coefficient (D) for electrons (De), and for holes (D h ) (cm2/sec). E = electron beam energy (eV). Eeh = carrier pair creation energy (eV). E bg = band-gap energy (eV). ET = carrier trap energy level (eV). S = electric field strength (V Icm). E = dielectric constant. f = energy fraction of the incident electron beam that is reflected from the sample surface. g = carrier pair generation rate (cm -3).I = electric current (amps). Ib = SEM electron beam current (amps). Ig = IbE(1 -f)IEeh = maximum beam generated current (amps). Icc = collected current (short circuit current) (amps). Is = saturation current of a p-n junction (amps). J e , J h = electron (J e ) or hole (J h ) flux (cm-2 sec-I ). k = Boltzmann's constant = 1.38 X 10-23 I/'K. Leo L h = diffusion length for electrons (L e) and holes (L h ) (cm). m = mass (gms). n = equilibrium electron density (cm -3). iln = excess electron density (cm-3 ). NT = carrier trap density (cm-3 ). NB = net ionized impurity density (cm-3 ). p = equilibrium hole density (cm -3). ilp = excess hole density (cm -3). q = electronic charge = 1.6 X 10-19 C. R = recombination rate (sec-I).R e = electron range (cm). p = density (gm/cm 3 ). S = surface recombination velocity (cm/sec). l: = charge collection efficiency. 0', U e , Uh = capture cross section (0') for electrons (u e ) and holes (u h ) (cm 2 ). T = temperature (OK). T, T e , Th = lifetime (T) for electrons (Te) and for holes (T h ) (sec). T...

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Electron beam recording in SiO₂with direct read-out using the electron beam induced current at a p-n junction

Cited by 4 publications

References 4 publications

Challenges and Applications of Emerging Nonvolatile Memory Devices

Challenges and Applications of Emerging Nonvolatile Memory Devices

Electrical phenomena in amorphous oxide films

Charge collection scanning electron microscopy

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Electron beam recording in SiO2with direct read-out using the electron beam induced current at a p-n junction

Cited by 4 publications

References 4 publications

Challenges and Applications of Emerging Nonvolatile Memory Devices

Challenges and Applications of Emerging Nonvolatile Memory Devices

Electrical phenomena in amorphous oxide films

Charge collection scanning electron microscopy

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Product

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Electron beam recording in SiO₂with direct read-out using the electron beam induced current at a p-n junction