Electron-beam-pumped lasing in ZnSe epitaxial layers grown by metal-organic vapor-phase epitaxy

Abstract

Stimulated emission and laser action under N2 laser radiation and electron-beam excitation at room temperature was studied in ZnSe epitaxial layers grown by metal-organic vapor-phase epitaxy. The laser threshold was about Ithr=1 MW/cm2, the pulse energy was Eem=0.3 μJ at the excitation intensity of Iexc=26 MW/cm2. The duration was tem=2 ns and the wavelength was λem=473.2–475.2 nm. Stimulated emission and laser action are due to the recombinations in a high-density electron-hole plasma at Iexc≳Ithr. The light amplification takes place in both the Fabry–Pérot cavity and in the scheme of the zig-zag ray propagation inside the crystal without feedback.

High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy

“…After the report of the first II-VI-based junction laser in 1991, 2 a great number of investigations have been devoted to the understanding of ptype doping of ZnSe, and to the understanding of the lasing properties of ZnSe epitaxial layers and ZnSe-based heterostructures using external electron-beam or optical excitation. [3][4][5][6][7][8][9][10][11] Room-temperature optically pumped lasing of ZnSe-based QW heterostructures grown by MOVPE has been achieved by several groups, 3,4,6,7 using ZnSe/ZnSSe multiple-quantum-well ͑MQW͒ heterostructures 3,4,6 or ZnSe/ ZnMgSSe double heterostructures. 7 The main aim of our work was the investigation of the influence of the type of heterostructure, well width L z , and optical confinement factor ⌫ on the laser threshold and on the possibility of achieving high-temperature lasing.…”