High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy

Gurskii, A. L.; Marko, Igor P.; Луценко, Е. В.; Yablonskii, G. P.; Kalisch, H.; Hamadeh, H.; Heuken, M.

doi:10.1063/1.122184

Cited by 5 publications

(5 citation statements)

References 12 publications

(10 reference statements)

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“…Since this shift is irreversible, it is caused by the structural changes in the active regions. The most probable mechanism is the Cd and Zn interdiffusion in the active region, analogous to the effects we observed earlier [6][7][8] in ZnMgSSe/ZnSe QW based lasers [9]. The threshold of this process correlates with the inherent radiation density in the cavity.…”

Section: Resultsmentioning

confidence: 63%

Optical properties of Cd(Zn)Se/ZnMgSSe heterostructures with fractional QD‐like CdSe insertions at high excitation levels

Луценко

Gurskii²,

Pavlovskii

et al. 2006

Phys. Status Solidi (c)

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It was found that in the Cd(Zn)Se/ZnMgSSe heterostructures with QD-like CdSe insertions in the lasing regime the structure changes take place manifesting itself, first, in the irreversible blue shift of the laser radiation spectra. This process depends on excitation intensity and on the cavity length, correlating with the inherent radiation density in the cavity. At excitation densities above 250 kW/cm 2 , the reduction of the radiative efficiency was observed. The second process is the increase of radiation intensity during laser operation under certain excitation conditions caused by the self-annealing of the laser structure induced by the inherent laser light and resulting in a decrease of the laser threshold by about 15-20%. Choosing the appropriate excitation regime, one may prolong the lifetime of this type of lasers.

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Section: Resultsmentioning

confidence: 63%

Optical properties of Cd(Zn)Se/ZnMgSSe heterostructures with fractional QD‐like CdSe insertions at high excitation levels

Луценко

Gurskii²,

Pavlovskii

et al. 2006

Phys. Status Solidi (c)

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“…Laser action was achieved up to T = 450 K, 577 K and 612 K in GRINSCH (for a well width of d = 40 nm), SQW-SCH (d = 40 nm) and MQW-SCH (8 QWs, d = 5 nm), respectively, with a maximum laser pulse energy of 20-30 nJ at T = 300 K [10,11]. Figure 1 shows the laser thresholds of these structures (see curve 1) and the integrated photoluminescence (PL) intensity from the sample surfaces (curve 2, circles -SQW-SCH; curve 3, squares -MQW-SCH; curve 4, diamonds -GRINSCH) as a function of temperature.…”

Section: Resultsmentioning

confidence: 99%

“…The nominal composition of the quaternary barrier layers for the inner QW confinement in the SCH structures is x(Mg) = 0.11 and y(S) = 0.16. Details of the heterostructure growth and characteristics were described earlier [10][11][12]. Laser cavities were obtained by cleavage which produced {110} facets.…”

Section: Methodsmentioning

confidence: 99%

Thermal Stability of ZnMgSSe/ZnSe Laser Heterostructures

Marko

Луценко

Yablonskii

et al. 2001

phys. stat. sol. (a)

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Subject classification: 78.45.+h; 78.55.Et; 78.67.De; S8.12 Optically pumped lasing and photoluminescence of ZnMgSSe/ZnSe quantum wells grown by metal-organic vapour phase epitaxy were studied in the temperature interval of 13-650 K. Thermal annealing at high temperatures deteriorated the lasing properties which, however, could be almost completely recovered by subsequent optical excitation above the lasing threshold. The technique of spectrum imaging in a transmission electron microscope with an energy filter and a two-dimensional detector was applied to ZnMgSSe/ZnSe multiple quantum well laser structures. It was found that the main degradation mechanism of ZnMgSSe/ZnSe quantum well heterostructures at temperatures higher than 450 K is the diffusion of S atoms from the barriers into the quantum wells which leads to increasing point defect concentrations in the active layers of the lasers. It was established that stimulated lasing decreases the defect concentration and reduces the laser threshold in the optically pumped ZnMgSSe/ZnSe quantum well lasers after their thermal degradation at 450-650 K.

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“…It was shown earlier that using the ZnMgSSe quaternary system for waveguide layers in QW-SCH lasers led to an increase of the optical confinement factor and, as a consequence, to a significant decrease of the laser threshold and to an increase of the maximum operating temperature. Laser action was achieved up to T = 450 K, 577 K and 612 K in GRINSCH (for a well width of d = 40 nm), SQW-SCH (d = 40 nm) and MQW-SCH (8 QWs, d = 5 nm), respectively, with a maximum laser pulse energy of 20-30 nJ at T = 300 K [10,11]. Figure 1 shows the laser thresholds of these structures (see curve 1) and the integrated photoluminescence (PL) intensity from the sample surfaces (curve 2, circles -SQW-SCH; curve 3, squares -MQW-SCH; curve 4, diamonds -GRINSCH) as a function of temperature.…”

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Thermal stability of ZnMgSSe/ZnSe laser heterostructures

Marko

Yablonskii²,

Gurskii³

et al.

2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium On

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Optically pumped lasing and photoluminescence of ZnMgSSe/ZnSe quantum wells grown by MOWE were studied in a temperature interval of 78-650K. The technique of spectrum imaging in a transmission electron microscope with energy filter and two-dimensional detector was applied to ZnMgSSeEnSe multiple quantum well laser structures. It was found that the main degradation mechanism of the ZnMgSSe/ZnSe heterostructures at temperatures higher than 450 K is the diffusion of S atoms from the barriers into the quantum wells which leads to increasing point defect concentrations in the active layers of the lasers. It was established that the inherent laser radiation decreases the defect concentration and reduces the laser threshold in the optically pumped ZnMgSSeIZnSe quantum well lasers after their thermal degradation at T=450-650 K. Quantitative S profiles are extracted from this quaternary system. From a comparison of as-grown and annealed structures, the diffusivity of S has been calculated to 6 * lO-"m' s-' at T=550 K.

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High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy

Cited by 5 publications

References 12 publications

Optical properties of Cd(Zn)Se/ZnMgSSe heterostructures with fractional QD‐like CdSe insertions at high excitation levels

Optical properties of Cd(Zn)Se/ZnMgSSe heterostructures with fractional QD‐like CdSe insertions at high excitation levels

Thermal Stability of ZnMgSSe/ZnSe Laser Heterostructures

Thermal stability of ZnMgSSe/ZnSe laser heterostructures

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