Electron Beam Lithography of 15×15 nm<sup>2</sup> Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Komori, Takuya; Zhang, Hui; Akahane, Takashi; Mohamad, Zurina; Yin, You; Hosaka, Sumio

doi:10.1143/jjap.51.06fb02

Cited by 13 publications

(12 citation statements)

References 33 publications

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“…We can consider that the cross-section is formed by salty developing in EB drawing with HSQ resist. In our previous study on the EB drawing, the EB drawing method has improved the contrast of HSQ-resist EB-drawing and high gamma-value developing [12]. This experimental result agrees with the consideration as described in Fig.…”

Section: Resultssupporting

confidence: 88%

“…Here, we set constant thickness of the coated HQS resist to about 25 nm in the EB drawing. Furthermore, we used high resolution EB drawing with salty developer for HSQ resist to get steep side wall of the guide line [12], [16].…”

Section: Resultsmentioning

confidence: 99%

“…The guide line pattern was used with 2 parallel lines. The EB drawing was done with 30 keV high resolution SEM system [11], [12].…”

Section: Methodsmentioning

confidence: 99%

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Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

et al. 2021

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We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 99%

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Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

et al. 2021

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“…The EB writing system is a combination of a high-resolution scanning electron microscope (SEM) with a Schottky emission-type field-emission electron gun (JSM6500F, JEOL) and a drawing controller (Beam Draw, Tokyo Technology) . To form narrow nanowires with high-resolution, negative-tone resist hydrogen silsesquioxane (HSQ, Dow Corning) and a high-contrast salty development solution , were employed. Normally, a thin HSQ resist layer would be employed to form a high-resolution pattern because the EB scattering range (lateral) in a thin resist layer is smaller than that in a thick resist layer.…”

Section: Methodsmentioning

confidence: 99%

Design and Fabrication of Silicon Nanowire-Based Biosensors with Integration of Critical Factors: Toward Ultrasensitive Specific Detection of Biomolecules

Zhang

Kikuchi

Ohshima

et al. 2020

ACS Appl. Mater. Interfaces

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As critical factors affecting the sensing performance of silicon nanowire (SiNW) biosensors, the structure, functional interface, and detection target were analyzed and designed to improve sensing performance. For an improved understanding of the dependence of sensor structure on sensitivity, a simple theoretical analysis was proposed to predict the sensitivity of biosensors with different SiNW types, widths, and doping concentrations. Based on the theoretical analysis, a biosensor integrating optimized critical factors was designed and fabricated. Optimizations focusing on the following aspects are considered: (1) employing n-type SiNW and controlling the impurity doping concentration of SiNW at approximately 2 × 1016–6 × 1016 atoms/cm3 to obtain a suitable charge density, (2) minimizing the SiNW width to 16.0 nm to increase the surface area-to-volume ratio, (3) using a native oxide layer on SiNW as a gate insulator to transport the captured charge molecules closer to the SiNW surface, (4) modifying the SiNW surface by 2-aminoethylphosphonic acid coupling to form a high-density self-assembled monolayer for enhancing the stability bound molecules, and (5) functionalizing the SiNW with ovalbumin molecules for specifically capturing the target immunoglobulin G (IgG) molecules. The sensing performance was evaluated by detecting IgG with concentrations ranging from 6 aM to 600 nM and control experiments. The SiNW biosensor revealed ultrahigh sensitivity and specific detection of target IgG with a measured limit of detection of 6 aM. The integration of the critical SiNW biosensor factors provides a significant possibility of a rapid and ultrasensitive diagnosis of diseases at their early stages.

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“…This study was conducted by using only guide lines. This is because we cannot form fine dot arrays with a diameter of <10 nm using EB drawing with advanced development. − …”

mentioning

confidence: 99%

Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS–PDMS Self-Assembly

Hosaka

Akahane

Huda

et al. 2014

ACS Appl. Mater. Interfaces

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We have studied graphoepitaxy to make nanodots or nanolines ordered along electron beam (EB)-drawn resist guide using block copolymers (BCPs) of polystyrene-polydimethylsiloxane (PS-PDMS). We found out that the number n of ordered molecular dot arrays in the line gap increases stepwise with the gap between guide lines. The n self-assembled dot arrays were ordered in a gap between n and n+1 times the mean PDMS pitch and self-assembled with no guide pattern. According to the ordering characteristics, 6 nm sized and 10 nm pitched PDMS dot arrays were formed using the BCP self-assembly with the guide lines.

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Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Cited by 13 publications

References 33 publications

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Design and Fabrication of Silicon Nanowire-Based Biosensors with Integration of Critical Factors: Toward Ultrasensitive Specific Detection of Biomolecules

Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS–PDMS Self-Assembly

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Electron Beam Lithography of 15×15 nm2 Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer

Cited by 13 publications

References 33 publications

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

Design and Fabrication of Silicon Nanowire-Based Biosensors with Integration of Critical Factors: Toward Ultrasensitive Specific Detection of Biomolecules

Controlling of 6 nm Sized and 10 nm Pitched Dot Arrays Ordered along Narrow Guide Lines Using PS–PDMS Self-Assembly

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Electron Beam Lithography of 15×15 nm² Pitched Nanodot Arrays with a Size of Less than 10 nm Using High Development Contrast Salty Developer