Electron beam doping of Si into GaAs in the overlayer Si/substrate GaAs and the sandwiched system of GaAs/Si/GaAs

Wada, Takahiro

doi:10.1016/0168-583x(89)90202-4

Cited by 8 publications

(2 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This mode of diffusion is exemplified by the diffusion of Au in Si [4 -6], in which Au atoms may occupy both substitutional (Au s ) and interstitial (Au i ) sites via the kickout mechanism. As part of ongoing research into enhanced diffusion, Wada et al [7 -9] in a study on ntype germanium reported that the Hall coefficient in a 110 µm thick layer of the material changes from negative to positive at a depth of about 50 µm after exposure to an electron beam with total flux of 10 16 electrons/cm 2 at 7 MeV. Electron beam doping (EBD), first proposed by Wada [7][8][9][10], has been further developed by the present authors [11][12][13][14][15][16][17][18][19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Wada¹,

Fujimoto

2003

phys. stat. sol. (c)

Self Cite

View full text Add to dashboard Cite

The effect of the elegant superdiffusion process was examined in the unirradiated region for three layer structures. GaAs semiconductor substrates coated with vacuum-evaporated Si were doped with Si by electron beam doping (EBD) at 750 keV using GaAs/Si//Si/GaAs systems. The samples were exposed to an electron beam with a fluence of (3.7-5.0) × 10 17 electrons/cm 2 with a mean current density of 8.1 A/cm 2 in a Van de Graaff accelerator at 100 °C in a N 2 gas atmosphere. The irradiated samples were inspected by secondary-ion mass spectrometry and photoluminescence analysis, revealing the occurrence of superdiffusion. It was found that EBD occurs as a result of the interstitial migration of displaced interstitial atoms toward the Si//Si interface, strong surface diffusion at the interface, and high impurity concentrations at the interface that induce concentration-and recombination-enhanced diffusion. Two kickout mechanisms were identified for substitution of migrating atoms in the GaAs substrate.

show abstract

Section: Introductionmentioning

confidence: 99%

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Wada¹,

Fujimoto

2003

phys. stat. sol. (c)

Self Cite

View full text Add to dashboard Cite

show abstract

“…In 1980, electron beam doping (EBD) by superdiffusion at room temperature was proposed by one of the authors (Wada) [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The superdiffusion technique is a non-equilibrium condition using electron irradiation of three-layer systems.…”

Section: Introductionmentioning

confidence: 99%

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

Wada

Fujimoto²

2003

DDF

View full text Add to dashboard Cite

Diodes were fabricated by electron beam doping (superdiffusion) for a non-equilibrium condition by electron irradiation. The entire electron beam doping process is composed mainly of three kinds of steps, as follows:displaced atoms by electron irradiation, surface diffusion of atoms, kick-out mechanism of impurity atoms. Impurity doping can be interpreted by the kick-out mechanism, which is a combination of interstitialcy and direct interstitial diffusion.

show abstract

Mechanism of electron-beam doping in semiconductors

Wada

Yasuda

1996

Phys. Rev. B

View full text Add to dashboard Cite

Electron beam doping of Si into GaAs in the overlayer Si/substrate GaAs and the sandwiched system of GaAs/Si/GaAs

Cited by 8 publications

References 13 publications

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

Mechanism of electron-beam doping in semiconductors

Contact Info

Product

Resources

About