Mechanism of electron-beam doping in semiconductors

Wada, Takahiro; Yasuda, Kimihiko

doi:10.1103/physrevb.53.4770

Cited by 13 publications

(14 citation statements)

References 27 publications

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“…Here, the Ga atoms in the ZnO nanowires only originate from the GaN/sapphire substrate because no additional Ga resource was intentionally introduced during the growth process. Surface diffusion is believed to have much higher diffusion coefficient than that of volume diffusion and the contribution of surface diffusion is demonstrated in the growth of compound semiconductor nanowires . Importantly, Ga atoms have higher concentration near the sidewall surface and uniform distribution in the axial direction.…”

Section: Resultsmentioning

confidence: 99%

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Wang

Sun

Sheng

et al. 2015

Phys. Status Solidi RRL

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Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ∼10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Wang

Sun

Sheng

et al. 2015

Phys. Status Solidi RRL

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“…The proof that EBD is not a thermal process has been reported in Refs. [13,21]. In a two-layer structure of a Ge overlain sheet and a Si substrate, the number of Ge peaks in Si for a Rutherford backscattering spectroscopy (RBS) spectra increases with increasing irradiation temperature [21] at 20, 40 and 60 °C, respectively.…”

Section: Discussion 41 Mechanism Of Modified Ebdmentioning

confidence: 99%

“…[13,21]. In a two-layer structure of a Ge overlain sheet and a Si substrate, the number of Ge peaks in Si for a Rutherford backscattering spectroscopy (RBS) spectra increases with increasing irradiation temperature [21] at 20, 40 and 60 °C, respectively. The values measured by SIMS as a function of depth measured from the Si front surface were in good agreement with those done by RBS [21].…”

Section: Discussion 41 Mechanism Of Modified Ebdmentioning

confidence: 99%

“…The interstitials are introduced from the surface of GaAs up to a depth of 0.2 mm. The energy spectra of electrons at different depth in GaAs and Si for incident electron energies of 750 keV were calculated [21]. The results were obtained by using Sugiyama's program [35] for a Monte Carlo simulation for the theory of fast electron penetration in matter [22].…”

Section: Number Of Displaced Atoms In the Gaas Layermentioning

confidence: 99%

“…As part of ongoing research into enhanced diffusion, Wada et al [7 -9] in a study on ntype germanium reported that the Hall coefficient in a 110 µm thick layer of the material changes from negative to positive at a depth of about 50 µm after exposure to an electron beam with total flux of 10 16 electrons/cm 2 at 7 MeV. Electron beam doping (EBD), first proposed by Wada [7][8][9][10], has been further developed by the present authors [11][12][13][14][15][16][17][18][19][20][21][22][23][24]. In the present paper, the effects of fine superdiffusion process was studied for three-layer structure.…”

Section: Introductionmentioning

confidence: 99%

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Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Wada¹,

Fujimoto

2003

phys. stat. sol. (c)

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The effect of the elegant superdiffusion process was examined in the unirradiated region for three layer structures. GaAs semiconductor substrates coated with vacuum-evaporated Si were doped with Si by electron beam doping (EBD) at 750 keV using GaAs/Si//Si/GaAs systems. The samples were exposed to an electron beam with a fluence of (3.7-5.0) × 10 17 electrons/cm 2 with a mean current density of 8.1 A/cm 2 in a Van de Graaff accelerator at 100 °C in a N 2 gas atmosphere. The irradiated samples were inspected by secondary-ion mass spectrometry and photoluminescence analysis, revealing the occurrence of superdiffusion. It was found that EBD occurs as a result of the interstitial migration of displaced interstitial atoms toward the Si//Si interface, strong surface diffusion at the interface, and high impurity concentrations at the interface that induce concentration-and recombination-enhanced diffusion. Two kickout mechanisms were identified for substitution of migrating atoms in the GaAs substrate.

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Electron beam doping of impurity atoms into semiconductors by superdiffusion

Wada¹,

Fujimoto

2003

phys. stat. sol. (c)

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Thin diffusion layers (50 -1000 Å) in semiconductors can be introduced by electron beam doping (EBD) processes. In this technique, an evaporate film or impurity layer is irradiated with an electron beam to induce superdiffusion into the underlying semiconductor substrate. In this study, two-and three-layer structures are examined without annealing, and the EBD of P, B, N and Al into Si, diamond and SiC substrates is investigated.

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Mechanism of electron-beam doping in semiconductors

Cited by 13 publications

References 27 publications

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Electron beam doping of impurity atoms into semiconductors by superdiffusion

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