Electron Beam Absorbed Current as a means of locating metal defectivity on 45nm SOI technology

Dickson, Kris; Lange, Gert de; Erington, Kent; Ybarra, Juan

doi:10.1109/ipfa.2011.5992793

Cited by 3 publications

(1 citation statement)

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“…Shifts in the Fermi levels can be evaluated by the G-band peak positions [24] using Raman spectra analysis [24][25][26][27][28]; thus, we expect that variations in the density of states can be evaluated using a G-band peak position map by Raman spectroscopy. The electron beam absorbed current (EBAC) method can be used to visualize the absorbed current due to electron beam irradiation in order to identify the open and/or short points in various semiconductor devices [29][30][31][32][33][34][35]. It was considered that EBAC measurements can evaluate local electrical properties of graphene with nanoscale spatial resolution of materials during material characterization.…”

Section: Introductionmentioning

confidence: 99%

Electrical resistivity mapping of potassium-doped few-layer CVD graphene by EBAC measurements

Okigawa,

Nakajima,

Okazaki

et al. 2023

J. Phys. D: Appl. Phys.

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The electron beam absorbed current (EBAC) method identifies the open and/or short points in various semiconductor devices, which can be applied to characterize the current path and local resistance in graphene. In this study, potassium (K)-doped few-layer graphene with inhomogeneous K atoms seemed to be one of the appropriate materials to characterize the current path by EBAC. Nonuniform contrast in the EBAC image due to inhomogeneous local resistances is observed, which is explained by the variation of the Fermi level in the graphene channel from the G-band peak shifts from Raman spectroscopy. The changes in the contrast of the EBAC images are obtained by applying a gate voltage. These changes are attributed to the modulation of the local carrier densities by applying the gate voltage. For comparison, uniform contrast in EBAC images and uniform G-band peak positions of undoped few-layer graphene field effect transistors are confirmed. The obtained results suggest that homogeneous Fermi level leads to a uniform current path. EBAC enables us to evaluate the uniformity of local resistance and current through a pass in the graphene channel, which can be applied to other two-dimensional materials, such as transition metal dichalcogenides, graphene oxide, and hexagonal boron nitride.

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