Electron and Phonon Scattering in GaAs at High Temperatures

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

“…27 and 28 and they are listed in Table 2. Tempera− ture dependence of thermal conductivities of semiconductor and dielectric layers have been reported by Adachi [29], Amith et al [30], and Guden and Piprek [31,32]. For the AuGe layer, its RT thermal conductivity has been given in www.thinfilm.com.…”

Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases

“…Acoustic-optical scattering and four-phonon processes were used by Steigmeier and co-workers to explain the temperature dependence of their measured thermal conductivity of III-V compounds. [20][21][22] On the other hand, Ecsedy and Klemens found that four-phonon processes are much weaker than three-phonon processes even at temperatures of up to 1000 K, and that the relative impact of cell size on these scattering processes is not inherently clear. 23 Among bulk semiconductors, silicon carbide (SiC), gallium nitride (GaN), and aluminum nitride (AlN) exist in both ZB and WZ phases.…”

Enhanced thermoelectric properties of Sr5In2Sb6via Zn-doping

“…Above 450 K for undoped and 550 K for Zn-doped samples, the mobility values start to decrease due to acoustic phonon scattering (m f T Àv , 1.0 # v # 1.5). 9,28 There is a cusp in the Sr 5 In 2 Sb 6 mobility at 675 K, which is possibly attributed to a similar phase change seen in the isostructural Ca 5 M 2 Sb 6 systems (M ¼ Al, In, Ga). 8,29 In the undoped Sr 5 In 2 Sb 6 sample, the temperature dependence of the resistivity points to nondegenerate semiconducting behavior.…”