Electron and nuclear spin dynamics in plastically deformed silicon crystals enriched in isotope 29Si

Effect of a constant magnetic field on dislocation anharmonicity in silicon

“…4), which is in full agree ment with Eq. (12). Furthermore, the extrapolation of the dependence to the point N d = 0 yields β d = 1.4 × 10 13 Pa, which is in agreement with β previously obtained for dislocation free p Si samples [5].…”

“…The kinetic features observed in different materials are controlled, as a rule, by the internal transformation of defect com plexes in the field of internal mechanical stresses or under other external forces. The magnetoplasticity of elemental semiconductors is studied in less detail as compared, for example, with ionic crystals, although a noticeable activity in the study of the effect of mag netic fields on physico mechanical properties of semi conductors, including single crystal silicon, is observed in recent years [10][11][12][13][14][15].…”

“…The effect of plastic deformation modes on mag netic properties of Si single crystals (including those enriched with 29 Si isotope) was considered in [12,13]. It was found that plastic deformation of semiconduc tors by bending and torsion leads to the formation of paramagnetic centers with EPR spectra differing from the spectra of centers previously studied under uniax ial deformation.…”

“…Based on Eqs. (9) and (10), we can estimate the dislocation contribution to the modulus β as (11) or, taking into account the interrelation of β d with dis location structure parameters [4], (12) we can trace experimentally the effect of the disloca tion parameters (N d , , θ) on the nonlinear elastic modulus. Here, Ω is the orientation factor, μ is the shear modulus, g is a dimensionless coefficient char acterizing the dislocation elastic field sizes, N d and L d are the average dislocation density and average length…”