Electromigration study of Cu/low k dual-damascene interconnects

Lee, K.-D.; Ogawa, Ennis T.; Matsuhashi, Hideki; Ho, Paul S.; Blaschke, V.; Augur, Rod

doi:10.1109/relphy.2002.996655

Cited by 22 publications

(10 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Eventually the interconnect may delaminate along the interface between the capping layer and the Cu or intermetal dielectric (IMD). Accumulated Cu atoms are able to extrude into these cracks, shorting to neighboring metal lines [4], [5]. Our electromigration tests on 0.13-m technology, Cu dual damascene interconnects, also supported this scenario, however, they revealed a new failure mode due to temporary extrusions.…”

Section: Introductionsupporting

confidence: 55%

Temporary extrusion failures in accelerated lifetime tests of copper interconnects

Zhang

Choy²,

Chapman³

et al. 2005

IEEE Electron Device Lett.

View full text Add to dashboard Cite

A novel electromigration failure mode was detected in 0.13-m technology, copper dual damascene interconnects. Extrusions formed between the test lead and neighboring monitor lines, resulting in short-circuit failure. However, many of these extrusions were short lived, shrinking within a period of a minute to an hour. These phenomena indicated that a temporary "soft failure" existed in accelerated copper electromigration tests in addition to the traditional permanent failure or "hard failure." These soft failures would be missed unless short sampling intervals (less than a minute) and continuous monitoring of the leakage current between test metal lines and neighboring circuits were carried out. Consistent with our experimental results, physical modeling suggested that capillary forces were able to rupture a long and narrow extrusion and the electric field across the extrusion could accelerate this process.

show abstract

Section: Introductionsupporting

confidence: 55%

Temporary extrusion failures in accelerated lifetime tests of copper interconnects

Zhang

Choy²,

Chapman³

et al. 2005

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…Because of the lower modulus, the Blech effect and the critical length for line immortality will be reduced [103]. Second, the barrier layers often have weak adhesion to low-k materials; the weak adhesion can result in extrusion fails during an EM stress [104]. Finally, low-k materials have lower thermal conductivity than does SiO 2 .…”

Section: Dielectric Effectmentioning

confidence: 99%

Copper Metal for Semiconductor Interconnects

Cheng¹,

Lee²,

Huang³

2018

Noble and Precious Metals - Properties, Nanoscale Effects and Applications

View full text Add to dashboard Cite

Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace aluminum (Al) as an interconnecting conductor in order to reduce the resistance. In this chapter, the deposition method of Cu films and the interconnect fabrication with Cu metallization are introduced. The resulting integration and reliability challenges are addressed as well.

show abstract

“…Hence, there will be more joule heating for a given current density [125], resulting in a higher temperature for the wire, and therefore a faster rate of electromigration. The barrier layers often have weak adhesion to low-k materials; the weak adhesion can result in extrusion fails during an electromigration stress [127]. Because of the lower modulus, the Blech effect and the critical length for line immortality will be reduced [126].…”

Section: Electromigrationmentioning

confidence: 99%

Process Technology for Copper Interconnects

Gambino

2012

Handbook of Thin Film Deposition

View full text Add to dashboard Cite

Electromigration study of Cu/low k dual-damascene interconnects

Cited by 22 publications

References 12 publications

Temporary extrusion failures in accelerated lifetime tests of copper interconnects

Temporary extrusion failures in accelerated lifetime tests of copper interconnects

Copper Metal for Semiconductor Interconnects

Process Technology for Copper Interconnects

Contact Info

Product

Resources

About