Electromigration Characteristics of Vias in Ti:W/Al-Cu (2wt%) Multilayered Metallization

May, Jeffrey S.

doi:10.1109/irps.1991.363216

Cited by 6 publications

(3 citation statements)

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“…(t) were related to that of Fofld (t), over a large range of test data, through simple multiplicative constants; t50 reduces and o increases for the defected sub-population [6] . For vias, although actual lifetest data was not available, published data [9,10] indicates that lognormal distributions, modified as above, apply.…”

Section: Reliability Modelingmentioning

confidence: 99%

<title>Reliability simulator for improving IC manufacturability</title>

Moosa

Poole

1994

SPIE Proceedings

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A Monte-Carlo reliability simulator for integrated circuits that incorporates the effects of process-flaws, material properties, the mask layout and use-conditions for interconnects is presented. The mask layout is decomposed into distinct objects, such as contiguous metal runs, vias and contacts, for which user-defined cumulative distribution functions (cdfs) are used for determining the probability of failure. These cdf's are represented using a mixture of defect-related and wearout-related distributions. The failure distributions for nets, which are sets of interconnected layout objects, are obtained by combining the distributions of their component objects. System reliability is obtained by applying control variate sampling to the reliability network which is comprised of all nets. The effects of series, parallel and k-out-of-n substructures within the reliability network are accounted for. A Bayesian approach to incorporating burn-in data with simulated estimates is also presented. A program that interfaces directly with commercially used CAD software has been implemented. Results provide a qualitative verification of the methodology and show that predictions which incorporate failures due to process flaws are significantly more pessimistic than those obtained by following current practice.

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Section: Reliability Modelingmentioning

confidence: 99%

<title>Reliability simulator for improving IC manufacturability</title>

Moosa

Poole

1994

SPIE Proceedings

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“…[22][23][24][25] Furthermore, the tungsten-filled via and the aluminum wire layers are electrically connected with higher reliability than the copper or aluminum plug. [26][27][28] The via resistance was 2.5 ³ measured at room temperature. The heater was located directly under the DUT, isolated from the DUT by an ILD.…”

Section: Introductionmentioning

confidence: 99%

“…In our 0.25-µm-rule BiCD process, the tungsten-filled via was introduced because it is a solution to the problems of metallization such as insulator layer planarization and contact failure [22][23][24][25]. Furthermore, the tungsten-filled via and the aluminum wire layers are electrically connected with higher reliability than the copper or aluminum plug [26][27][28]. The via resistance was 2.5 ³ measured at room temperature.…”

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confidence: 99%

Reliability study of thermal cycling stress on smart power devices

Zhang

Yoshihisa

Furuya

et al. 2014

Jpn. J. Appl. Phys.

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In this paper, we describe a smart power device degradation behavior under thermal cycling stress. An innovative test structure was developed, which faithfully reflects a stress state caused by the smart power device during operation. From our experiment, the device degraded after millions of fast thermal cycling pulses. We discovered that via destruction was the cause of the device degradation. For the duration of thermal cycling stress, the via resistance increased gradually, and finally increased rapidly at the point of millions of cycles. A failure via was observed, which was broken into two parts. Therefore, the via disconnection was considered to be due to thermo-mechanical stress or electro-migration. Some experiments were conducted, and we demonstrated that the via destruction dominated to the thermo-mechanical stress introduced by the thermal cycling stress.

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Electromigration in ALCu interconnections with W‐plug contacts

Ferlazzo

Reimbold

Gonchond³

et al. 1993

Quality & Reliability Eng

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Tungsten is widely investigated for contact and via filling to improve planarization and step coverage. Although many electromigration data are available on multilayered structures, very few studies have been carried out on W‐plug structures and mainly concern the vias. This paper investigates the electromigration performance of W‐plug contacts and underlines the main failure modes. A comparison is made with classical contacts and W‐plug vias, pointing out a new failure mode.

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Electromigration Characteristics of Vias in Ti:W/Al-Cu (2wt%) Multilayered Metallization

Cited by 6 publications

References 0 publications

<title>Reliability simulator for improving IC manufacturability</title>

<title>Reliability simulator for improving IC manufacturability</title>

Reliability study of thermal cycling stress on smart power devices

Electromigration in ALCu interconnections with W‐plug contacts

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