Electromechanical analysis of a piezoelectric semiconductor bilayer system with imperfect interface

Ren, C.; Wang, K.F.; Wang, B.L.

doi:10.1016/j.euromechsol.2023.105173

Cited by 3 publications

(1 citation statement)

References 65 publications

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“…Different to traditional piezoelectric materials, PSC structures have unique characteristics of electromechanical carrier multi-field coupling. In the practical application of PSC devices and components, the interface characteristics play a leading role in the reliability and performance of the system [39][40][41]. For PSC composite structures, debonding or interfacial fractures between two adjacent layers are a typical failure mechanism.…”

Section: Introductionmentioning

confidence: 99%

Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

Tian,

Zhang,

et al. 2024

Mathematics

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Piezoelectric semiconductor materials possess a unique combination of piezoelectric and semiconductor effects, exhibiting multifaceted coupling properties such as electromechanical, acoustic, photoelectric, photovoltaic, thermal, and thermoelectric capabilities. This study delves into the anti-plane mechanical model of an interface crack between a strip of piezoelectric semiconductor material and an elastic material. By introducing two boundary conditions, the mixed boundary value problem is reformulated into a set of singular integral equations with a Cauchy kernel. The details of carrier concentration, current density, and electric displacement near the crack are provided in a numerical analysis. The findings reveal that the distribution of the current density, carrier concentration, and electric displacement is intricately influenced by the doping concentration of the piezoelectric semiconductor. Moreover, the presence of mechanical and electric loads can either expedite or decelerate the growth of the crack, highlighting the pivotal role of external stimuli in influencing material behavior.

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Section: Introductionmentioning

confidence: 99%

Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

Tian,

Zhang,

et al. 2024

Mathematics

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Nonlocal analysis of Rayleigh-type wave propagating in a gradient layered structure with distinct interfacial imperfections

Pradhan,

Saha,

Samal

et al. 2024

Eur. Phys. J. Plus

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Two-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis

He,

Zhang,

Wang

et al. 2024

Applied Sciences

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Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by the variational principle and the Mindlin plate theory, a two-dimensional (2D) higher-order theory and equations for thin-film devices are established for a rectangular coordinate system, in which Newton’s law (i.e., stress equation of motion), Gauss’s law (i.e., charge equation of electrostatics), Continuity equations (i.e., conservation of charge for holes and electrons), drift–diffusion theory for currents in semiconductors, and unavoidable thermo-deformation-polarization-carrier coupling response in external stimulus field environment are all considered. As a typical application of these equations, the static characteristic analysis of electromechanical fields for the extensional deformation of a PS thin-film device with thermal field excitations is carried out by utilizing established zeroth-order equations and the double trigonometric series solution method. It is revealed that the extensional deformations, electric potential, electron and hole concentration perturbations, and their current densities can be controlled actively via artificially tuning thermal fields of external stimuli. Especially, a higher temperature rise can induce a deeper potential well and a higher potential barrier, which can play a vital role in driving effectively motions and redistributions of electrons and holes. Overall, the derived 2D equations as well as the quantitative results provide us some useful guidelines for investigating the thermal regulation behavior of PS thin-film devices.

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Electromechanical analysis of a piezoelectric semiconductor bilayer system with imperfect interface

Cited by 3 publications

References 65 publications

Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

Nonlocal analysis of Rayleigh-type wave propagating in a gradient layered structure with distinct interfacial imperfections

Two-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis

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