Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

Abstract

Piezoelectric semiconductor materials possess a unique combination of piezoelectric and semiconductor effects, exhibiting multifaceted coupling properties such as electromechanical, acoustic, photoelectric, photovoltaic, thermal, and thermoelectric capabilities. This study delves into the anti-plane mechanical model of an interface crack between a strip of piezoelectric semiconductor material and an elastic material. By introducing two boundary conditions, the mixed boundary value problem is reformulated into a set of singular integral equations with a Cauchy kernel. The details of carrier concentration, current density, and electric displacement near the crack are provided in a numerical analysis. The findings reveal that the distribution of the current density, carrier concentration, and electric displacement is intricately influenced by the doping concentration of the piezoelectric semiconductor. Moreover, the presence of mechanical and electric loads can either expedite or decelerate the growth of the crack, highlighting the pivotal role of external stimuli in influencing material behavior.