Electromagnetic-Circuital-Thermal Multiphysics Simulation Method: A Review (Invited)

Zhang, Huan‐Huan; Wang, Pan Pan; Zhang, Shuai; Li, Long; Li, Ping; Sha, Wei E. I.; Jiang, and Li Jun

doi:10.2528/pier20112801

Cited by 21 publications

(5 citation statements)

References 58 publications

(69 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Inspired by the moth-eye structure, the reflectivity is reduced by introducing micro-/nano-structures. Mainly, the light will be internally reflected many times inside the structure to form a “light trap” ( Zhang et al, 2020a ; Otte and Denz, 2020 ; Yang et al, 2021 ). As a result, the existence of micro-/nano-structures can improve the light absorption capacity of the optoelectronic device.…”

Section: Mechanismmentioning

confidence: 99%

Micro-/Nano-Structures Fabricated by Laser Technologies for Optoelectronic Devices

Zhou

Wei

et al. 2021

Front. Chem.

View full text Add to dashboard Cite

Due to unique optical and electrical properties, micro-/nano-structures have become an essential part of optoelectronic devices. Here, we summarize the recent developments in micro-/nano-structures fabricated by laser technologies for optoelectronic devices. The fabrication of micro-/nano-structures by various laser technologies is reviewed. Micro-/nano-structures in optoelectronic devices for performance improvement are reviewed. In addition, typical optoelectronic devices with micro-nano structures are also summarized. Finally, the challenges and prospects are discussed.

show abstract

Section: Mechanismmentioning

confidence: 99%

Micro-/Nano-Structures Fabricated by Laser Technologies for Optoelectronic Devices

Zhou

Wei

et al. 2021

Front. Chem.

View full text Add to dashboard Cite

show abstract

“…In this section, the RRAM mechanisms of different GE-RRAMs are firstly introduced. Then, multiphysic and compact models of GE-RRAM are further described [32,33,48,49].…”

Section: Graphene Rrammentioning

confidence: 99%

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

Xie¹,

Wang²,

Yang³

et al. 2021

PIER

View full text Add to dashboard Cite

Resistive random access memory (RRAM) devices are promising candidates for next generation high capacity data storage due to their superior properties such as cost-effective fabrication, high operating speed, low power consumption, and long data retention. Particularly, the two dimensional (2D)-materials-based RRAM has attracted researchers' attention because of its unique physical and chemical properties without the constraint of lattice matching. In this review, the switching mechanisms and modeling of RRAM devices based on the 2D materials such as hexagonal-boron nitride (h-BN) and graphene are discussed. Firstly, the monolayer and multilayer h-BN RRAMs are introduced, and their mechanisms and compact model are further described. Then, the mechanisms of graphene electrodebased RRAM (GE-RRAM) for different applications are also introduced and compared. Furthermore, the electrical conductivity, multi-physic and compact models of GE-RRAM are introduced. This review paper provides the guidance for the design and optimization of the 2D-materials-based RRAM in the next generation memories.

show abstract

“…T ime domain Maxwell solvers are more suitable for simulations dealing with non-linearity, wideband electromagnetic excitation and multiphyiscal coupling than their frequencydomain counterparts [1][2][3]. The differential-equation-based time-domain Maxwell solvers, like the finite difference time domain (FDTD) method and the finite element time domain (FETD) method, are often preferred for these types of simulations [2][3][4]. Another type of time-domain Maxwell solver is the time-domain integral equation (TDIE), which is based on the Green function.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Contrast and Temporal Expansion on the Marching-on-in-Time Contrast Current Density Volume Integral Equation

Van Diepen,

van Beurden,

Dilz

2024

PIER B

View full text Add to dashboard Cite

The contrast current density volume integral equation, discretized with piecewise constant spatial basis and test functions and Dirac-delta temporal test functions and the piecewise polynomial temporal basis functions, results in a causal implicit marching-on-intime scheme that we refer to as the marching-on-in-time contrast current density volume integral equation (MOT-JVIE). The companion matrix stability analysis of the MOT-JVIE solver shows that for a fixed spatial and temporal step size, the stability is independent of the scatterer's dielectric contrast for quadratic spline temporal basis functions. Whereas, Lagrange and cubic spline exhibit instabilities at higher contrast. We relate this stability performance to the expansion and testing procedure in time. We further illustrate the capabilities of the MOT-JVIE based on quadratic spline temporal basis functions by: comparing the MOT-JVIE solution to time-domain results from literature and frequency-domain results from a commercial combined field integral equation solver. Finally, we present a long time sequence for a high-contrast scatterer discretized with 24,000 spatial unknowns.

show abstract

Electromagnetic-Circuital-Thermal Multiphysics Simulation Method: A Review (Invited)

Cited by 21 publications

References 58 publications

Micro-/Nano-Structures Fabricated by Laser Technologies for Optoelectronic Devices

Micro-/Nano-Structures Fabricated by Laser Technologies for Optoelectronic Devices

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

The Influence of Contrast and Temporal Expansion on the Marching-on-in-Time Contrast Current Density Volume Integral Equation

Contact Info

Product

Resources

About