Electroluminescence in tellurium-doped cadmium sulphide

Aten, A. C.; Haanstra, J. H.

doi:10.1016/0031-9163(64)90622-5

Cited by 36 publications

(7 citation statements)

References 4 publications

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“…Alongside the photocurrent data in Table II wavelengths (46,47,62). Electroabsorption measurements on undoped CdS suggest that there should be little variation of a with electrode potential (63).…”

Section: (9-28)mentioning

confidence: 99%

Luminescent Properties of Semiconductor Photoelectrodes

Ellis

Karas

1980

Interfacial Photoprocesses: Energy Conversion and Synthesis

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Section: (9-28)mentioning

confidence: 99%

Luminescent Properties of Semiconductor Photoelectrodes

Ellis

Karas

1980

Interfacial Photoprocesses: Energy Conversion and Synthesis

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“…The selection of CdS:Te was made with the expectation that its PEC properties would mimic those for CdS, from which stable PEC's had been constructed, and that it would be very emissive at room temperature (39)(40)(41)(42)(43)(44). Both expectations were satisfied.…”

Section: B N-cds:tementioning

confidence: 99%

“…[39][40][41][42][43][44]. Holes trapped at Te sites can coulombically bind an electron in or near the conduction band; the radiative collapse of this exciton produces the observed orange PL.…”

Section: B N-cds:tementioning

confidence: 99%

Luminescent Properties of Semiconductor Electrodes.

Ellis¹

1985

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“…Aten et al 3,4 first reported luminescence at 77K in lightly doped CdS:Te (Te concentration ~ 10 18 cm -3 ). They observed an emission band at 600nm, which was largely quenched at room temperature.…”

Section: Introductionmentioning

confidence: 98%

Ultraviolet Emitting SrS:Te Thin Films

et al. 2002

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In the bulk SrS has an indirect bandgap of ~ 4.32 eV. When SrS is doped with tellurium, ultraviolet emission occurs at 360 nm (for singlet) and 400nm (for Te-Te dimers) due to recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown at room temperature on Si. Deposited film thickness ranged from 0.1 -1.5 µm, with optimized films grown at ~0.5 µm to avoid peeling and cracking. Te doping was incorporated by both ion implantation and conventional diffusion of deposited Te capping films. The characteristics of the ultraviolet emission will be discussed along with results from microstructural, chemical and optical characterization techniques.

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Electroluminescence in tellurium-doped cadmium sulphide

Cited by 36 publications

References 4 publications

Luminescent Properties of Semiconductor Photoelectrodes

Luminescent Properties of Semiconductor Photoelectrodes

Luminescent Properties of Semiconductor Electrodes.

Ultraviolet Emitting SrS:Te Thin Films

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